S29GL256P11TFI010 Spansion Inc., S29GL256P11TFI010 Datasheet - Page 27

Flash 3V 256Mb Mirrorbit highest address110ns

S29GL256P11TFI010

Manufacturer Part Number
S29GL256P11TFI010
Description
Flash 3V 256Mb Mirrorbit highest address110ns
Manufacturer
Spansion Inc.

Specifications of S29GL256P11TFI010

Memory Type
NOR
Memory Size
256 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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November 21, 2006 S29GL-P_00_A3
7.7.3
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See
Figure
algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical
erase. After a successful sector erase, all locations within the erased sector contain FFFFh. The system is
not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of no less than 50 µs occurs. During the time-
out period, additional sector addresses and sector erase commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 µs. Any sector erase address and command
following the exceeded time-out (50µs) may or may not be accepted. Any command other than Sector Erase
or Erase Suspend during the time-out period resets that sector to the read mode. The system can monitor
DQ3 to determine if the sector erase timer has timed out (See
rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the sector returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by reading DQ7 or DQ6/DQ2
in the erasing sector. Refer to
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be reinitiated once that sector has returned to reading array
data, to ensure the sector is properly erased.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without
first writing unlock cycles within the command sequence. See
function.
Figure 7.3
diagrams.
Software Functions and Sample Code
The following is a C source code example of using the sector erase function. Refer to the Spansion Low Level
Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory
software development guidelines.
Cycle
/* Example: Sector Erase Command *
1
2
3
4
5
6
D a t a
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)base_addr + 0x555 ) = 0x0080;
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)sector_address )
7.3.) The device does not require the system to preprogram prior to erase. The Embedded Erase
illustrates the algorithm for the erase operation. Refer to
Unlimited additional sectors may be selected for erase; command(s) must be written within 50 µs.
S h e e t
Sector Erase Command
Setup Command
Description
Unlock
Unlock
Unlock
Unlock
( A d v a n c e
S29GL-P MirrorBit
Section 7.8
(LLD Function = lld_SectorEraseCmd)
= 0x0030;
for information on these status bits.
Table 7.8 Sector Erase
Operation
I n f o r m a t i o n )
Write
Write
Write
Write
Write
Write
TM
Flash Family
/
/* write unlock cycle 1
/* write unlock cycle 2
/* write setup command
/* write additional unlock cycle 1 */
/* write additional unlock cycle 2 */
/* write sector erase command
Sector Address
Byte Address
Base + AAAh
Base + AAAh
Base + AAAh
Base + 555h
Base + 555h
Section 7.7.8
Section
Section 11.7.5
7.8.6.) The time-out begins from the
Sector Address
Word Address
Base + 2AAh
Base + 2AAh
Base + 555h
Base + 555h
Base + 555h
for details on the Unlock Bypass
Table 12.1 on page 61
for parameters and timing
*/
*/
*/
*/
00AAh
00AAh
0055h
0080h
0055h
0030h
Data
and
25

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