S29GL256P11TFI010 Spansion Inc., S29GL256P11TFI010 Datasheet - Page 29

Flash 3V 256Mb Mirrorbit highest address110ns

S29GL256P11TFI010

Manufacturer Part Number
S29GL256P11TFI010
Description
Flash 3V 256Mb Mirrorbit highest address110ns
Manufacturer
Spansion Inc.

Specifications of S29GL256P11TFI010

Memory Type
NOR
Memory Size
256 Mbit
Access Time
110 ns
Data Bus Width
8 bit, 16 bit
Architecture
Uniform
Interface Type
Page-mode
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
50 mA
Mounting Style
SMD/SMT
Operating Temperature
+ 85 C
Package / Case
TSOP-56
Memory Configuration
128K X 16
Ic Interface Type
Parallel
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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November 21, 2006 S29GL-P_00_A3
7.7.4
Chip Erase Command Sequence
Chip erase is a six-bus cycle operation as indicated by
Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The Embedded
Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to
electrical erase. After a successful chip erase, all locations of the chip contain FFFFh. The system is not
required to provide any controls or timings during these operations. The “Command Definition” section in the
appendix shows the address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer
to “Write Operation Status” for information on these status bits.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without
first writing unlock cycles within the command sequence. See
function.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that sector has returned to reading array data, to ensure the entire array is properly erased.
Software Functions and Sample Code
The following is a C source code example of using the chip erase function. Refer to the Spansion Low Level
Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory
software development guidelines.
Cycle
/* Example: Chip Erase Command */
/* Note: Cannot be suspended
1
2
3
4
5
6
D a t a
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)base_addr + 0x555 ) = 0x0080;
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
*( (UINT16 *)base_addr + 0x000 ) = 0x0010;
S h e e t
Chip Erase Command
Setup Command
Description
Unlock
Unlock
Unlock
Unlock
( A d v a n c e
S29GL-P MirrorBit
*/
(LLD Function = lld_ChipEraseCmd)
Operation
Table 7.9 Chip Erase
I n f o r m a t i o n )
Write
Write
Write
Write
Write
Write
TM
Flash Family
/* write unlock cycle 1
/* write unlock cycle 2
/* write setup command
/* write additional unlock cycle 1 */
/* write additional unlock cycle 2 */
/* write chip erase command
Table 12.1 on page
Byte Address
Base + AAAh
Base + AAAh
Base + AAAh
Base + AAAh
Base + 555h
Base + 555h
Section 7.7.8
Word Address
61. These commands invoke the
Base + 2AAh
Base + 2AAh
Base + 555h
Base + 555h
Base + 555h
Base + 555h
for details on the Unlock Bypass
*/
*/
*/
*/
00AAh
00AAh
0055h
0080h
0055h
0010h
Data
27

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