LCMXO640C-3TN100C Lattice, LCMXO640C-3TN100C Datasheet - Page 28

CPLD - Complex Programmable Logic Devices 640 LUTS 74 I/O

LCMXO640C-3TN100C

Manufacturer Part Number
LCMXO640C-3TN100C
Description
CPLD - Complex Programmable Logic Devices 640 LUTS 74 I/O
Manufacturer
Lattice
Series
MachXOr
Datasheet

Specifications of LCMXO640C-3TN100C

Memory Type
SRAM
Number Of Macrocells
320
Delay Time
4.9 ns
Number Of Programmable I/os
74
Operating Supply Voltage
1.8 V, 2.5 V, 3.3 V
Supply Current
17 mA
Maximum Operating Temperature
+ 90 C
Minimum Operating Temperature
0 C
Package / Case
TQFP-100
Mounting Style
SMD/SMT
Supply Voltage (max)
3.465 V
Supply Voltage (min)
1.71 V
Programmable Type
In System Programmable
Delay Time Tpd(1) Max
4.9ns
Voltage Supply - Internal
1.71 V ~ 3.465 V
Number Of Logic Elements/blocks
-
Number Of Gates
-
Number Of I /o
74
Operating Temperature
0°C ~ 85°C
Mounting Type
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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MachXO1200 and MachXO2280 Hot Socketing Specifications
1. Insensitive to sequence of V
2. 0 ≤ V
3. I
4. LVCMOS and LVTTL only.
Lattice Semiconductor
DC Electrical Characteristics
Non-LVDS General Purpose sysIOs
I
LVDS General Purpose sysIOs
I
I
I
I
I
I
I
I
V
C1
C2
1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured
2. T
3. Please refer to V
4. Not applicable to SLEEPN pin.
5. When V
DK
DK_LVDS
IL,
PU
PD
BHLS
BHHS
BHLO
BHHO
Symbol
BHT
Symbol
DK
with the output driver active. Bus maintenance circuits are disabled.
low transition. For MachXO1200 and MachXO2280 true LVDS output pins, V
I
A
IH
3
is additive to I
25°C, f = 1.0MHz
1, 4, 5
CC
≤ V
IH
Input or I/O Leakage
I/O Active Pull-up Current
I/O Active Pull-down Current
Bus Hold Low sustaining current
Bus Hold High sustaining current V
Bus Hold Low Overdrive current
Bus Hold High Overdrive current
Bus Hold trip Points
I/O Capacitance
Dedicated Input Capacitance
is higher than V
CC
Input or I/O Leakage Current
Input or I/O Leakage Current
(MAX), 0 ≤ V
IL
PU,
and V
I
PW
Parameter
or I
IH
CCIO
CCIO
in the sysIO Single-Ended DC Electrical Characteristics table of this document.
CC,
Parameter
BH
2
.
, a transient current typically of 30ns in duration or less with a peak current of 6mA can occur on the high-to-
V
≤ V
CCAUX,
CCIO
Over Recommended Operating Conditions
and V
(MAX), and 0 ≤ V
2
CCIO
0 ≤ V
(V
0 ≤ V
V
V
0 ≤ V
0 ≤ V
0 ≤ V
V
V
V
V
. However, assumes monotonic rise/fall rates for V
IL
IN
IN
CCIO
CC
CCIO
CC
CCIO
(MAX) ≤ V
= V
= 0.7V
= Typ., V
= Typ., V
IN
IN
IN
IN
IN
0 ≤ V
V
V
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
= 3.3V, 2.5V, 1.8V, 1.5V, 1.2V,
IN
IN
- 0.2V) < V
IL
CCAUX
≤ (V
≤ 0.7 V
≤ V
≤ V
≤ V
(MAX)
≤ V
> V
CCIO
IH
IH
IH
IN
CCIO
CCIO
CCIO
Condition
(MAX)
(MAX)
(MAX)
IO
IO
≤ V
≤ V
IN
3-2
CCIO
Condition
= 0 to V
= 0 to V
≤ V
CCAUX
IH
- 0.2V)
IN
(MAX.)
IH
≤ 3.6V
(MAX)
(MAX).
IH
IH
IH
must be less than or equal to V
(MAX)
(MAX)
DC and Switching Characteristics
V
Min.
IL
MachXO Family Data Sheet
Min.
-30
-30
(MAX)
30
30
CC,
V
CCAUX,
Typ.
35
Typ.
CCIO
1, 2, 3, 4
8
8
and V
.
+/-1000
+/-1000
V
Max.
CCIO.
IH
Max.
-150
-150
150
150
10
40
(MIN)
Units
Units
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
pf
pf
V

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