Replacement Semiconductors TO-220 NPN PWR AMP

NTE331

Manufacturer Part NumberNTE331
DescriptionReplacement Semiconductors TO-220 NPN PWR AMP
ManufacturerNTE ELECTRONICS
NTE331 datasheet
 

Specifications of NTE331

Transistor PolarityNPNCollector Emitter Voltage V(br)ceo100V
Transition Frequency Typ Ft3MHzPower Dissipation Pd90W
Dc Collector Current15ADc Current Gain Hfe250
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
Page 1/2

Download datasheet (22Kb)Embed
Next
NTE331 (NPN) & NTE332 (PNP)
Silicon Complementary Transistors
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (I
E
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
= 0), V
C
Emitter Current, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
Collector Current, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Base Current, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
Total Power Dissipation (T
C
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance Junction–to–Case, R
Electrical Characteristics: (T
Parameter
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining
Voltage
Collector–Emitter Saturation
Voltage
Audio Power Amp, Switch
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
+25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= +25 C unless otherwise specified)
C
Symbol
Test Conditions
I
I
= 0, V
= 100V
CBO
E
CB
I
= 0, V
= 100V, T
E
CB
I
I
= 0, V
= 50V
CEO
B
CE
I
I
= 0, V
= 5V
EBO
C
EB
V
I
= 0, I
= 100mA, Note 1
CEO(sus)
B
C
V
I
= 5A, I
= 0.5A, Note 1
CE(sat)
C
B
I
= 10A, I
= 2.5A, Note 1
C
B
–65 to +150 C
1.4 C/W Max
Min
Typ
Max Unit
500
= +150 C
5
C
1
1
100
1
3
100V
100V
5V
15A
15A
5A
90W
+150 C
A
mA
mA
mA
V
V
V

NTE331 Summary of contents

  • Page 1

    ... NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications. Absolute Maximum Ratings: Collector–Base Voltage (I E Collector–Emitter Voltage (I Emitter– ...

  • Page 2

    Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage Base–Emitter Voltage DC Current Gain Transistion Frequency Note 1. Pulsed; Pulse Duration = 300 s, Duty Cycle = 1.5%. .147 (3.75) Dia Max .070 (1.78) Max .100 (2.54) = +25 C unless ...