NTE331 NTE ELECTRONICS, NTE331 Datasheet

Replacement Semiconductors TO-220 NPN PWR AMP

NTE331

Manufacturer Part Number
NTE331
Description
Replacement Semiconductors TO-220 NPN PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE331

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency Typ Ft
3MHz
Power Dissipation Pd
90W
Dc Collector Current
15A
Dc Current Gain Hfe
250
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
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Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (I
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Emitter Current, I
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance Junction–to–Case, R
Electrical Characteristics: (T
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining
Collector–Emitter Saturation
Voltage
Voltage
Parameter
B
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
E
= 0), V
C
NTE331 (NPN) & NTE332 (PNP)
= 0), V
B
= 0), V
+25 C), P
Audio Power Amp, Switch
stg
C
V
EBO
Symbol
= +25 C unless otherwise specified)
V
CEO(sus)
CBO
CE(sat)
I
I
I
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
EBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
I
I
I
I
I
I
I
E
E
B
C
B
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0, V
= 0, V
= 0, V
= 0, I
= 0, V
= 5A, I
= 10A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Test Conditions
CB
CB
CE
EB
B
= 100mA, Note 1
B
= 0.5A, Note 1
= 100V
= 100V, T
= 50V
= 5V
= 2.5A, Note 1
C
= +150 C
Min
100
Typ
–65 to +150 C
1.4 C/W Max
Max Unit
500
5
1
1
1
3
+150 C
100V
100V
mA
mA
mA
90W
V
V
V
15A
15A
A
5V
5A

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NTE331 Summary of contents

Page 1

... NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications. Absolute Maximum Ratings: Collector–Base Voltage (I E Collector–Emitter Voltage (I Emitter– ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage Base–Emitter Voltage DC Current Gain Transistion Frequency Note 1. Pulsed; Pulse Duration = 300 s, Duty Cycle = 1.5%. .147 (3.75) Dia Max .070 (1.78) Max .100 (2.54) = +25 C unless ...

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