NTE243 NTE ELECTRONICS, NTE243 Datasheet
NTE243
Manufacturer Part Number
NTE243
Description
Replacement Semiconductors TO-3 NPN DAR PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE243.pdf
(2 pages)
Specifications of NTE243
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
100W
Dc Collector Current
8A
Dc Current Gain Hfe
750
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
V
Continuous
Peak
Derate Above 25 C
CE(sat)
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 2V Max @ I
= 3V Max @ I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE243 (NPN) & NTE244 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
C
C
stg
A
= 3000 Typ @ I
= 4A
= 8A
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
I
I
I
CEO
EBO
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
J
thJC
CE
CE
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V, V
= 5V, I
= 40V, I
= 80V, V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4A
C
Test Conditions
E
BE(off)
= 80V Min @ 100mA
= 0
BE(off)
B
= 0
= 0, Note 1
= 1.5V, T
= 1.5V
A
= +150 C
Min
80
–
–
–
–
Typ
–65 to +200 C
–65 to +200 C
–
–
–
–
–
0.571W/ C
Max Unit
0.5
0.5
5.0
2.0
1.78 C/W
–
120mA
100W
mA
mA
mA
mA
80V
80V
16A
V
5V
8A
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NTE243 Summary of contents
Page 1
... NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain Collector–Emitter Sustaining Voltage Low Collector– ...
Page 2
... Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio Output Capacitance NTE243 NTE244 Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE243 B NTE244 B = +25 C unless otherwise specified) A Symbol Test Conditions h V ...