NTE270 NTE ELECTRONICS, NTE270 Datasheet

Replacement Semiconductors TO-218 NPN DAR PWR

NTE270

Manufacturer Part Number
NTE270
Description
Replacement Semiconductors TO-218 NPN DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE270

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
125W
Dc Collector Current
10A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO218 type package designed for general purpose amplifier and low frequency switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Pulse Width = 5ms, Duty Cycle
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak (Note 1)
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE270 (NPN) & NTE271 (PNP)
Darlington Power Amp, Switch
B
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
= 1000 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
CEO(sus)
I
I
I
CEO
CBO
EBO
D
J
thJC
10%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
C
I
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CE
CB
BE
= 5A, V
= 30mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V
= 50V, I
= 100V, I
= 100V Min @ 30mA
Test Conditions
CE
2%.
B
B
E
= 4V
= 0
= 0, Note 2
= 0
Min
100
Typ
–65 to +150 C
–65 to +150 C
Max Unit
2.0
1.0
2.0
35.7 C/W
1.0 C/W
500mA
125W
100V
100V
mA
mA
mA
V
10A
15A
5V

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NTE270 Summary of contents

Page 1

... NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain Collector– ...

Page 2

... ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time Fall Time Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle NTE270 +25 C unless otherwise specified) C Symbol Test Conditions h I ...

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