NTE268 NTE ELECTRONICS, NTE268 Datasheet
NTE268
Manufacturer Part Number
NTE268
Description
Replacement Semiconductors TO-202 NPN DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE268.pdf
(2 pages)
Specifications of NTE268
Product
Power Amplifiers
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202
type package designed for amplifier and driver applications where high gain is an essential require‐
ment, low power lamp and relay drivers and power drivers for high-current applications such as volt‐
age regulators.
Features:
D Low Collector-Emitter Saturation Voltage: V
D TO202 Type Package: 2W Free Air Dissipation @ T
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Emitter-Base Voltage, V
Colllector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction-to-Ambient, R
Thermal Resistance, Junction-to-Case, R
Note 1. Pulse Width ≤ 25ms, Duty Cycle ≤ 50%.
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ T
Continuous
Peak (Note 1)
Derate Above 25°C (Note 2)
Derate Above 25°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
A
C
NTE268 (NPN) & NTE269 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
= +25°C), P
= +25°C), P
CEO
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1.5V Max @ I
A
= +25°C
C
= 1.5A
-55° to +150°C
-55° to +150°C
13.3mW/°C
A
80mW/°C
12.5°C/W
= +25°C.
75°C/W
100mA
1.67W
10W
50V
50V
13V
2A
3A
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NTE268 Summary of contents
Page 1
... Silicon Complementary Transistors Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require‐ ment, low power lamp and relay drivers and power drivers for high-current applications such as volt‐ ...
Page 2
... ON Characteristics (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Collector Capacitance NTE268 NTE269 High Frequency Current Gain Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. NTE268 B NTE269 B = +25°C unless otherwise specified) A Symbol Test Conditions V I ...