NTE2311 NTE ELECTRONICS, NTE2311 Datasheet
NTE2311
Manufacturer Part Number
NTE2311
Description
Replacement Semiconductors TO-218 NON HI-V SW
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2311.pdf
(2 pages)
Specifications of NTE2311
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
450V
Power Dissipation Pd
150W
Dc Collector Current
15A
Dc Current Gain Hfe
10
Operating Temperature Range
-65°C To +175°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high
speed switching applications.
Features:
D High Blocking Capability: V
D Wide Surge Area: I
Applications:
D Switchmode Power Supply
D DC/DC and DC/AC Converters
D Motor Control
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Emitter Voltage (V
Emitter–Base Voltage, V
Collector Current (t
Base Current (t
Power Dissipation, P
Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Continuous
Peak
Continuous
Peak
T
T
C
C
= +25 C
= +60 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
5ms), I
p
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tot
5ms), I
CSM
EBO
High Voltage, High Speed Switch
B
= 55A @ 350V
CEO
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CEX
J
= –2.5V), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
C
V
Symbol
= 1000V
= +25 C unless otherwise specified)
CEO(sus)
(BR)EBO
I
I
CER
CEX
J
thJC
CEX
NTE2311
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
T
T
T
T
B
C
J
J
J
J
= 0, I
= 0, I
= +25 C
= +125 C
= +25 C
= +125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
E
= 200mA, L = 25mH
= 50mA
V
V
V
R
CE
BE
CE
BE
= –2.5V
= V
= V
= 10
CEX
CEX
,
,
Min
450
7
–
–
–
–
Typ
–
–
–
–
–
–
–65 to +175 C
Max Unit
0.2
2.0
0.5
4.0
30
–
1 C/W
1000V
150W
115W
450V
mA
mA
mA
mA
V
V
15A
30A
20A
7V
4A
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NTE2311 Summary of contents
Page 1
... High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability Wide Surge Area: I CSM Applications: D Switchmode Power Supply D DC/DC and DC/AC Converters ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter OFF Characteristics (Cont,d) Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Switching Characteristics (Switching Times on Resistive Load) Turn–On Time Storage Time Fall Time Switching Characteristics (Switching ...