NTE196 NTE ELECTRONICS, NTE196 Datasheet
NTE196
Manufacturer Part Number
NTE196
Description
Replacement Semiconductors TO-220 NPN AU PWROUT
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE196.pdf
(2 pages)
Specifications of NTE196
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
70V
Transition Frequency Typ Ft
4MHz
Power Dissipation Pd
40W
Dc Collector Current
7A
Dc Current Gain Hfe
30
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for use in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 7 Amps: h
D Collector–Emitter Sustaining Voltage: V
D High Current–Gain Bandwidth Product:
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak
Derate Above 25 C
f
T
Parameter
= 4MHz Min @ I
= 10MHz Min @ I
Audio Power Output and Medium Power Switching
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE196 (NPN) & NTE197 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
C
C
= 500mA (NTE196)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
= 500mA (NTE197)
CEO(sus)
I
I
I
CEO
CEX
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
D
I
V
V
V
V
J
C
thJC
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
BE
CEO(sus)
= 100mA, I
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V, V
= 60V, I
= 80V, V
= 5V, I
= 2.3 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
= 70V Min
B
EB(off)
= 0
EB(off)
B
= 0
= 0, Note 1
2%.
= 1.5V, T
= 1.5V
C
= 7A
C
= +150 C
Min Typ Max Unit
70
–
–
–
–
–65 to +150 C
–65 to +150 C
–
–
–
–
–
3.125 C/W
100
1.0
2.0
1.0
0.32W/ C
–
40W
mA
mA
mA
70V
80V
10A
V
A
5V
7A
3A
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NTE196 Summary of contents
Page 1
... Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack- age designed for use in general purpose amplifier and switching applications. Features Current Gain Specified to 7 Amps Collector– ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current–Gain Bandwidth Product NTE196 NTE197 Output Capacitance Small–Signal Current Gain Note 1. Pulse Test: Pulse Width | f Note test .147 (3.75) Dia Max ...