NTE6403 NTE ELECTRONICS, NTE6403 Datasheet
NTE6403
Manufacturer Part Number
NTE6403
Description
Replacement Semiconductors BILAT SWITCH T0-92
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE6403.pdf
(2 pages)
Specifications of NTE6403
Gate Trigger Current Max, Igt
100µA
Holding Current Max Ih
0.5mA
Operating Temperature Range
-65°C To +125°C
Thyristor Case
TO-92
No. Of Pins
3
Termination Type
Through Hole
Filter Terminals
Through Hole
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of
a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/ C temperature coeffi-
cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate
rate effect and to obtain triggering at lower voltages.
The NTE6403 is specifically designed and characterized for applications where stability of switching
voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is
ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control cir-
cuits.
Absolute Maximum Ratings: (T
Peak Recurrent Forward Current (PW = 10 s, Duty Cycle = 1%, T
Peak Non–Recurrent Forward Current (PW = 10 s, T
Power Dissipation (Note 1), P
DC Forward Anode Current (Note 1)
DC Gate Current (Note 1, Note 2)
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. Derate linearly to zero at +125 C.
Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited
Electrical Characteristics: (T
Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply
Static
Switching Voltage
Switching Current
Absolute Switching Voltage Difference
Absolute Switching Current Difference
Holding Current
OFF State Current
Temperature Coefficient of Switching Voltage
ON State Forward Voltage Drop
Forward Gate Current to Trigger
by maximum power rating.
in either direction of current flow.
Parameter
Silicon Bilateral Switch (SBS)
D
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, Note 3 unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Integrated Circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|V
|I
Symbol
S2
S2
I
V
T
V
I
I
I
GF
– V
– I
J
S
H
B
C
NTE6403
S
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S1
S1
|
|
V
T
I
V
F
A
F
F
= 175mA
= –55 to +85 C
= 5V
= 5V, R
A
Test Conditions
= +25 C)
L
= 1k
T
T
A
A
= +25 C
= +85 C
. . . . . . . . . . . . . . . . . . . . . . . . . .
A
= +25 C)
Min
7.5
–
–
–
–
–
–
–
–
–
. . . . . . . . . . . . . . .
Typ
0.05
–
–
–
–
–
–
–
–
–
–55 to +125 C
–65 to +150 C
Max
10.0
120
200
100
9.0
0.1
1.7
10
.5
–
300mW
175mA
%/ C
Unit
mV
mA
5mA
V
V
A
A
A
A
A
1A
5A
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NTE6403 Summary of contents
Page 1
... Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/ C temperature coeffi- cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages. ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Peak Pulse Amplitude Turn–On Time Turn–Off Time Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply in either direction of current flow. .210 (5.33) Max .500 (12.7) ...