NTE2348 NTE ELECTRONICS, NTE2348 Datasheet
NTE2348
Manufacturer Part Number
NTE2348
Description
Replacement Semiconductors TO-3P NPN HI-V/SPD
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2348.pdf
(2 pages)
Specifications of NTE2348
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Transition Frequency Typ Ft
15MHz
Power Dissipation Pd
150W
Dc Collector Current
12A
Dc Current Gain Hfe
10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area
Absolute Maximum ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. Pulse Width
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Continuous
Peak (Note 1)
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
300 s, Duty Cycle
EBO
= +25 C), P
High Voltage, High Speed Switch
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
= +25 C unless otherwise specified)
J
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
h
h
CE(sat)
I
I
BE(sat)
FE (1)
FE (2)
C
C
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
T
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2348
V
V
V
V
V
V
I
I
10%.
C
C
CB
EB
CE
CE
CE
CB
= 6A, I
= 6A, I
= 5V, I
= 800V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
B
B
C
C
C
= 1.2mA
= 1.2mA
C
= 0
= 800mA
= 4A
E
800mA
= 0
Min
10
–
–
8
–
–
–
–
Typ
215
15
–
–
–
–
–
–
–55 to +150 C
Max Unit
2.0
1.5
10
10
–
–
–
–
+150 C
1100V
150W
MHz
800V
pF
V
V
12A
30A
A
A
7V
6A
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NTE2348 Summary of contents
Page 1
... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage NTE2348 Silicon NPN Transistor = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage V Emitter–Base Breakdown Voltage Collector–Emitter Sustaining Voltage V Turn–On Time Storage Time Fall Time .190 (4.82) .787 (20.0) = +25 C unless otherwise specified) A Symbol Test Conditions V ...