NTE473 NTE ELECTRONICS, NTE473 Datasheet

Replacement Semiconductors TO-39 NPN RF PWR DRV

NTE473

Manufacturer Part Number
NTE473
Description
Replacement Semiconductors TO-39 NPN RF PWR DRV
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE473

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Transition Frequency Typ Ft
500MHz
Power Dissipation Pd
175W
Dc Collector Current
20A
Dc Current Gain Hfe
60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator
applications in military and industrial equipment. Suitable for use as output, driver or predriver stages
in VHF equipment.
Features:
D Specified 175MHz, 28V Characteristics:
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. Pulsed thru a 25mH inductor.
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Output Power: 2.5W
Minimum Gain: 10dB
Efficiency: 50%
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
V
V
Symbol
CEO(sus)
(BR)EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
I
I
I
CEO
CEX
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Power Driver
I
I
V
V
V
V
D
C
E
CE
CE
CE
BE
J
= 0.1mA, I
= 200mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE473
= 4V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 30V, I
= 30V, V
= 65V, V
C
Test Conditions
B
C
= 0
BE(off)
BE(off)
B
= 0
= 0
= 0, Note 1
= 1.5V, T
= 1.5V
C
= +200 C
Min
40
4
Typ
–65 to +200 C
–65 to +200 C
Max
0.1
5.0
1.0
0.1
40mW/ C
Unit
mA
mA
mA
mA
V
V
40V
65V
7W
4V
1A

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NTE473 Summary of contents

Page 1

... Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages in VHF equipment. Features: D Specified 175MHz, 28V Characteristics: Output Power: 2.5W Minimum Gain: 10dB ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Dynamic Characteristics Current Gain – Bandwidth Product Output Capacitance Functional Tests Power Input Common–Emitter Amplifier Power Gain Collector Efficiency = +25 C unless otherwise specified) A Symbol ...

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