NTE55 NTE ELECTRONICS, NTE55 Datasheet
NTE55
Manufacturer Part Number
NTE55
Description
Replacement Semiconductors TO-220 HI-FREQ DRVR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE55.pdf
(2 pages)
Specifications of NTE55
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-150V
Transition Frequency Typ Ft
30MHz
Power Dissipation Pd
50W
Dc Collector Current
-8A
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
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Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
D DC Current Gain Specified to 4A:
D Collector–Emitter Sustaining Voltage: V
D High Current Gain–Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
h
Continuous
Peak
Derate Above 25 C
Derate Above 25 C
FE
mentary pairs have their gain specification (h
=
=
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40 Min @ I
20 MIn @ I
High Frequency Driver for Audio Amplifier
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB)
C
C
A
CBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3A
= 4A
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE54 (NPN) & NTE55 (PNP)
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
T
thJA
= 30MHz Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150V Min
FE
) matched to within 10% of each other.
C
= 500mA
–65 to +150 C
–65 to +150 C
+62.5 C/W
0.016W/ C
0.04W/ C
+2.5 C/W
150V
150V
50W
16A
2W
5V
8A
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NTE55 Summary of contents
Page 1
... Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features Current Gain Specified to 4A Min @ I FE ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain DC Current Gain Linearity Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current Gain–Bandwidth Product Note 2. Pulse ...