NTE2309 NTE ELECTRONICS, NTE2309 Datasheet
NTE2309
Manufacturer Part Number
NTE2309
Description
Replacement Semiconductors TO-3P NPN HI-V/SPD
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2309.pdf
(2 pages)
Specifications of NTE2309
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Transition Frequency Typ Ft
15MHz
Power Dissipation Pd
2.5W
Dc Collector Current
12A
Dc Current Gain Hfe
10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D High Breakdown Voltage
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Collector Dissipation (T
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. Pules test: Pulse Width
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Output Capacitance
Continuous
Peak (Note 1)
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
EBO
High Voltage, High Current Switch
= +25 C), P
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
Symbol
V
V
= +25 C unless otherwise specified)
I
I
CE(sat)
BE(sat)
C
C
h
C
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2309
V
V
V
V
V
I
I
V
C
C
CB
EB
CE
CE
CE
CB
= 3A, I
= 3A, I
= 400V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
Test Conditions
B
B
C
C
C
= 0.6A
= 0.6A
C
= 0
= 0.4A
= 2A
E
= 0.4A
10%.
= 0
Min
10
–
–
8
–
–
–
–
Typ
120
15
–
–
–
–
–
–
–55 to +150 C
Max
2.0
1.5
10
10
–
–
–
–
+150 C
100W
Unit
MHz
900V
800V
2.5W
pF
V
V
12A
25A
A
A
7V
4A
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NTE2309 Summary of contents
Page 1
... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain–Bandwidth Product Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Output Capacitance NTE2309 Silicon NPN Transistor = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector–Emitter Sustaining Voltage Turn–On Time Storage Time Fall Time .190 (4.82) .787 (20.0) = +25 C unless otherwise specified) A Symbol Test Conditions ...