NTE2366 NTE ELECTRONICS, NTE2366 Datasheet
NTE2366
Manufacturer Part Number
NTE2366
Description
Replacement Semiconductors TO-92 PNP HI-V AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2366.pdf
(2 pages)
Specifications of NTE2366
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-300V
Transition Frequency Typ Ft
150MHz
Power Dissipation Pd
1W
Dc Collector Current
100mA
Dc Current Gain Hfe
320
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Capacitance
Reverse Transfer Capacitance
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage Video Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
A
V
V
V
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
= +25 C unless otherwise specified)
(Compl to NTE399)
(BR)CBO
(BR)CEO
(BR)EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
CE(sat)
BE(sat)
h
C
CBO
EBO
C
f
FE
T
ob
re
NTE2366
V
V
I
I
I
V
I
I
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
CB
= 10 A, I
= 10 A, I
= 1mA, R
= 20mA, I
= 20mA, I
= 4V, I
= 200V, I
= 10V, I
= 30V, I
= 30V, f = 1MHz
= 30V, f = 1MHz
Test Conditions
C
C
E
BE
C
B
B
C
= 0
E
= 0
= 0
= 2mA
= 2mA
= 10mA
= 10mA
=
= 0
Min
300
300
40
–
–
5
–
–
–
–
–
Typ
150
2.6
1.8
–
–
–
–
–
–
–
–
–55 to +150 C
Max
320
0.1
0.1
0.6
1.0
–
–
–
–
–
–
+150 C
100mA
200mA
Unit
MHz
300V
300V
1.0W
pF
pF
V
V
V
V
V
A
A
5V
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NTE2366 Summary of contents
Page 1
... Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Current Gain–Bandwidth Product Capacitance Reverse Transfer Capacitance NTE2366 Silicon PNP Transistor High Voltage Video Amp (Compl to NTE399) = +25 C unless otherwise specified CEO ...
Page 2
Max .512 (13.0) Min .100 (2.54) .240 (6.09) Max Seating Plane .026 (.66) Dia Max .200 (5.08) Max ...