NTE199 NTE ELECTRONICS, NTE199 Datasheet
NTE199
Manufacturer Part Number
NTE199
Description
Replacement Semiconductors NPN 50V 100mA HFE/800
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE199.pdf
(2 pages)
Specifications of NTE199
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
360mW
Dc Collector Current
100mA
Dc Current Gain Hfe
800
Operating Temperature Range
-55°C To +125°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector satu-
ration voltage, tight beta control, and excellent low noise characteristics.
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Steady State Collector Current (Note 1), I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
Note 1. Determined from power limitations due to saturation voltages at this current
Electrical Characteristics: (T
Static Characteristics
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Derate Above +25 C
Derate Above +25 C
Parameter
EBO
A
A
CBO
Low Noise, High Gain Amplifier
= +25 C), P
= +55 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
Symbol
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
= +25 C unless otherwise specified)
CBO
CES
EBO
T
T
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
V
V
V
V
NTE199
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
CB
CB
EB
= 5V
= 50V
= 50V, T
= 50V
Test Conditions
A
= +100 C
L
. . . . . . . . . . . . . . . . .
Min
–
–
–
–
Typ
–
–
–
–
–55 to +125 C
–55 to +150 C
Max
30
10
30
50
3.3mW/ C
3.3mW/ C
360mW
260mW
+260 C
100mA
Unit
nA
nA
nA
50V
70V
A
5V
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NTE199 Summary of contents
Page 1
... Low Noise, High Gain Amplifier Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu- ration voltage, tight beta control, and excellent low noise characteristics. ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Static Characteristics (Cont’d) Forward Current Transfer Ratio Breakdown Voltage Collector–to–Emitter Breakdown Voltage Collector–to–Base Breakdown Voltage Emitter–to–Base Collector Saturation Voltage Base Saturation Voltage Base Emitter ON Voltage Dynamic Characteristics Forward Current Transfer Ratio Output Capacitance, Common ...