NTE2377 NTE ELECTRONICS, NTE2377 Datasheet
NTE2377
Manufacturer Part Number
NTE2377
Description
Replacement Semiconductors TO-3P N-CH 900V 8A
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2377.pdf
(2 pages)
Specifications of NTE2377
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
1.6ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Low ON–State Resistance
D Very High–Speed Switching
D Converters
Absolute Maximum Ratings: (T
Drain–Source Voltage, V
Gate–Source Voltage, V
DC Drain Current, I
Pulsed Drain Current (Note 1), I
Allowable Power Dissipation (T
Maximum Channel Temperature, T
Storage Temperature Range, T
Note 1. Pulse Width
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
Electrical Characteristics: (T
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Source Leakage Current
Cutoff Voltage
Static Drain–Source On Resistance
Forward Transconductance
source.
Parameter
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 s, Duty Cycle
GSS
DSS
Enhancement Mode, High Speed
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
C
DP
= +25 C unless otherwise specified)
= +25 C), P
A
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +25 C unless otherwise specified)
Symbol
V
R
(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
GS(off)
DS(on)
GSS
DSS
g
fs
N–Channel,
NTE2377
MOSFET
1%.
D
I
V
V
V
V
V
D
GS
DS
DS
GS
DS
= 1mA, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0, V
= 10V, I
= 20V, I
= 0, V
= 10V, I
Test Conditions
GS
DS
GS
D
D
D
= Max Rating
= 30V
= 1mA
= 4A
= 4A
= 0
Min
900
2.5
–
–
2
–
Typ
1.2
5.0
–
–
–
–
–55 to +150 C
Max
1.0
1.6
100
–
3
–
+150 C
150W
Unit
mho
900V
mA
nA
V
V
30V
36A
8A
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NTE2377 Summary of contents
Page 1
... Allowable Power Dissipation (T Maximum Channel Temperature, T Storage Temperature Range, T Note 1. Pulse Width 10 s, Duty Cycle Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and source. Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current Gate– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn–On Time Rise Time Turn–Off Delay Time Fall Time Diode Forward Voltage .190 (4.82) .787 (20.0) = +25 C unless otherwise specified) A Symbol Test Conditions C iss ...