NTE2354 NTE ELECTRONICS, NTE2354 Datasheet
NTE2354
Manufacturer Part Number
NTE2354
Description
Replacement Semiconductors TO-3P NPN HI-V/HORZ
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2354.pdf
(2 pages)
Specifications of NTE2354
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
800V
Power Dissipation Pd
150W
Dc Collector Current
10A
Dc Current Gain Hfe
8
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Applications:
D High–definition color display horizontal deflection output
Features:
D Fast speed: t
D High breakdown voltage: V
D High reliability
Absolute Maximum Ratings: (T
Collector–to–Base Voltage, V
Collector–to–Emitter Voltage, V
Emitter–to–Base Voltage, V
Collector Current, I
Peak Collector Current, i
Collector Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Saturation Voltage
Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Collector–to–Emitter
Base–to–Emitter
Parameter
High Voltage Horizontal Output for High Definition CRT
f
= 100ns Typ
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
J
cp
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
V
Symbol
V
V
CBO
stg
A
CEO(sus)
CEO
CE(sat)
I
BE(sat)
I
h
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CES
EBO
t
stg
A
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
f
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1500V
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
I
V
I
I
V
I
I
C
C
C
C
C
CE
EB
CE
NTE2354
= 100mA, I
= 8A, I
= 8A, I
= 6A, I
= 6A, I
= 4V, I
= 1500V, R
= 5V, I
Test Conditions
B
B
B1
B1
C
= 2.0A
= 2.0A
C
= 1.2A, I
= 1.2A, I
= 0
= 1.0A
B
= 0
BE
= 0
B2
B2
= –2.4A
= –2.4A
Min Typ Max Unit
800
–
–
–
–
8
–
–
0.1
–
–
–
–
–
–
–
–55 to +150 C
1.0
1.0
5.0
1.5
3.0
0.2
–
–
+150 C
1500V
150W
800V
mA
mA
V
V
V
–
10A
25A
s
s
6V
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NTE2354 Summary of contents
Page 1
... Emitter Cutoff Current Saturation Voltage Collector–to–Emitter Saturation Voltage Base–to–Emitter DC Current Gain Storage Time Fall Time NTE2354 Silicon NPN Transistor = 1500V CBO = +25 C unless otherwise specified CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
C .591 (15.02) .787 (20. .126 (3.22) Dia E .215 (5.47) ...