NTE2347 NTE ELECTRONICS, NTE2347 Datasheet
NTE2347
Manufacturer Part Number
NTE2347
Description
Replacement Semiconductors TO-39 NPN GP MED PWR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2347.pdf
(2 pages)
Specifications of NTE2347
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Transition Frequency Typ Ft
50MHz
Power Dissipation Pd
1W
Dc Collector Current
5A
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Absolute Maximum Ratings:
Collector–Base Voltage (I
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Collector Current, I
Total Power Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Duration = 300 s, Duty Cycle = 1.5%.
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector–Base Capacitance
Turn–On Time
Storage Time
Fall Time
T
T
T
A
C
C
+25 C
+25 C
+100 C
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
J
E
General Purpose, Medium Power
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tot
= 0), V
B
= 0), V
stg
C
EBO
Silicon NPN Transistor
= +25 C unless otherwise specified)
CBO
V
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
CEO(sus)
C
CEO
I
CE(sat)
BE(sat)
I
h
CES
EBO
t
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
t
on
FE
t
T
s
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
NTE2347
V
V
V
V
I
I
I
I
I
I
V
V
V
C
C
C
C
C
C
CE
CE
CE
EB
CB
CC
CC
thJA
= 50mA, I
= 5A, I
= 5A, I
= 2A, V
= 2A, V
= 500mA, V
= 6V, I
= 150V, V
= 100V, V
= 100V, V
= 10V, I
= 20V, I
= 20V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
B
CE
CE
Test Conditions
C
= 500mA, Note 1
= 500mA, Note 1
C
E
B
C
= 2V, T
= 0
= 2V, Note 1
= 5A, I
= 0, f = 1MHz
= 0, Note 1
= 500mA, I
BE
BE
BE
CE
= 0
= 0
= 0, T
= 5V
C
B1
= –55 C, Note 1
= –I
C
= +150 C
B1
B2
= 500mA
= 500mA
Min
80
40
15
50
–
–
–
–
–
–
–
–
–
–
Typ
–65 to +200 C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max Unit
0.35
0.35
100
120
1.6
0.3
80
175 C/W
1
1
1
–
1
–
–
25 C/W
+200 C
150V
MHz
mA
mA
pF
80V
V
V
V
1W
7W
4W
A
A
s
s
s
6V
5A
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NTE2347 Summary of contents
Page 1
... General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage (I E Collector–Emitter Voltage (I Emitter–Base Voltage (I = 0), V ...
Page 2
Max .500 (12.7) Min Emitter 45 .031 (.793) .370 (9.39) Dia Max .355 (9.03) Dia Max .018 (0.45) Base Collector/Case ...