NTE16005 NTE ELECTRONICS, NTE16005 Datasheet
NTE16005
Manufacturer Part Number
NTE16005
Description
Replacement Semiconductors TO-39 NPN HI-CURR GP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE16004.pdf
(2 pages)
Specifications of NTE16005
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
75V
Power Dissipation Pd
10W
Dc Collector Current
2A
Dc Current Gain Hfe
30
Operating Temperature Range
-65°C To +200°C
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Small–Signal Characteristics
Small–Signal Current Gain
NTE16005
NTE16004
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE16004 (PNP) & NTE16005 (NPN)
Silicon Complementary Transistors
EBO
CBO
C
High Current, General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +25 C unless otherwise specified)
Symbol
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO)
CE(sat)
I
I
BE(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
h
CEX
EBO
h
300 s, Duty Cycle
FE
fe
D
I
V
V
V
I
I
I
I
I
J
thJC
C
C
C
C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
= 500mA, V
= 1A, V
= 500mA, I
= 500mA, V
= 50mA, V
= 70V, V
= 7V, I
= 100V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
CE
C
BE
= 0
= 2V
CE
B
B
BE
CE
CE
= 0
= 50mA
= 1.5V, T
= 4V, f = 10MHz
= 1.5V
2%.
= 4V
= 4V
C
= +150 C
Min
75
30
10
–
–
–
–
–
–
5
Typ
–
–
–
–
–
–
–
–
–
–
–65 to +200 C
–65 to +200 C
0.057mW/ C
Max
130
0.1
5.0
0.1
0.7
0.5
1.1
–
–
–
17.5 C/W
Unit
100V
mA
mA
mA
10W
V
V
V
V
75V
7V
2A
1A
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NTE16005 Summary of contents
Page 1
... NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector–Base Voltage, V CBO Emitter–Base Voltage, V EBO Continuous Collector Current, I Base Current Total Device Dissipation (T C Derate Above Operating Junction Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction– ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter Switching Characteristics Turn–On Time NTE16004 NTE16005 Turn–Off Time NTE16004 NTE16005 Emitter = +25 C unless otherwise specified) A Symbol Test Conditions 30V 500mA off V = 30V 500mA 50mA B1 B2 .260 (6.6) Max .500 (12.7) Min 45 .031 (.793) Min ...