NTE288 NTE ELECTRONICS, NTE288 Datasheet
NTE288
Manufacturer Part Number
NTE288
Description
Replacement Semiconductors TO-92 PNP HIV GP AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE287.pdf
(2 pages)
Specifications of NTE288
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-300V
Transition Frequency Typ Ft
50MHz
Power Dissipation Pd
625mW
Dc Collector Current
500mA
Dc Current Gain Hfe
25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation @ T
Total Device Dissipation @ T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
NTE288
NTE288
NTE288
NTE287
NTE287
NTE287
NTE287
NTE288
Derate Above +25 C
Derate Above +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage, General Purpose Amplifier
Silicon Complementary Transistors
EBO
CBE
NTE287 (NPN) & NTE288 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
= +25 C, P
= +25 C, P
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CBO
EBO
D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
I
I
I
V
V
V
C
C
E
CB
EB
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100 A, I
= 1mA, I
= 100 A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200V, I
= 6V, I
= 3V, I
Test Conditions
C
C
B
2%.
= 0
= 0
= 0, Note 1
C
E
E
= 0
= 0
= 0
Min
300
300
6
5
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–55 to +150 C
–55 to +150 C
83.3 C/mW
Max Unit
0.25
0.1
0.1
0.1
200 C/mW
–
–
–
–
12mW/ C
5mW/ C
625mW
500mA
300V
300V
1.5W
V
V
V
V
A
A
A
A
6V
5V
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NTE288 Summary of contents
Page 1
... NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector–Base Voltage, V CBE Emitter–Base Voltage, V EBO NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain NTE287 & NTE288 NTE287 NTE288 Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain – Bandwidth Product Collector–Base Capacitance NTE287 NTE288 Note 1. Pulse Test: Pulse Width ...