NTE383 NTE ELECTRONICS, NTE383 Datasheet
NTE383
Manufacturer Part Number
NTE383
Description
Replacement Semiconductors R245 PNP AU FREQ DRV
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE383.pdf
(2 pages)
Specifications of NTE383
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-100V
Transition Frequency Typ Ft
140MHz
Power Dissipation Pd
900mW
Dc Collector Current
-1A
Dc Current Gain Hfe
160
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Current Gain–Bandwidth Product
Capacitance
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
CBO
NTE382 (NPN) & NTE383 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Frequency Driver
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
V
V
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
V
C
h
CBO
f
FE
BE
T
ob
I
I
I
V
V
V
I
V
V
V
C
C
E
C
CB
CE
CE
CE
CE
CB
= 10 A, I
= 10 A, I
= 1mA, R
= 500mA, I
= 100V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Conditions
C
C
C
C
C
E
BE
E
= 150mA
= 500mA
= 150mA
= 150mA
= 0
= 0
E
B
= 0, f = 1MHz
=
= 0
= 50mA
Min
120
100
160
30
5
–
–
–
–
–
Typ
–55 to +150 C
140
20
–
–
–
–
–
–
–
–
Max Unit
320
1.0
1.5
10
–
–
–
–
–
–
900mW
+150 C
120V
100V
MHz
pF
V
V
V
V
V
A
5V
1A
2A
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NTE383 Summary of contents
Page 1
... NTE382 (NPN) & NTE383 (PNP) Silicon Complementary Transistors Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter–Base Voltage, V EBO Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .492 (12.5) Min .102 (2.6) Max .102 (2.6) Max .018 (0.48) .118 (3.0) Max .236 (6.0)Dia Max .024 (0.62) Max .059 (1.5) Typ .197 (5.0) .102 (2.6) Max .102 (2.6) Max ...