NTE37 NTE ELECTRONICS, NTE37 Datasheet
NTE37
Manufacturer Part Number
NTE37
Description
Replacement Semiconductors TO-3P PNP PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE37.pdf
(2 pages)
Specifications of NTE37
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-140V
Transition Frequency Typ Ft
15MHz
Power Dissipation Pd
100W
Dc Collector Current
12A
Dc Current Gain Hfe
200
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de-
signed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
NTE36
NTE37
NTE36
NTE37
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AF Power Amplifier, High Current Switch
Silicon Complementary Transistors
EBO
CBO
C
= +25 C), P
CEO
NTE36 (NPN) & NTE37 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
V
A
CE(sat)
I
I
h
h
V
C
CEO
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE1
FE2
f
= +25 C unless otherwise specified)
BE
T
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
V
V
V
V
V
V
V
I
C
CB
BE
CE
CE
CE
CB
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A, I
= 4V, I
= 80V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1MHz
= 5V, I
Test Conditions
B
C
= 500mA
C
C
C
C
E
= 0
= 1A
= 6A
= 1A
= 1A
= 0
Min
60
20
–
–
–
–
–
–
–
–
Typ
210
300
0.6
1.1
15
–
–
–
–
–
–40 to +150 C
Max
200
0.1
0.1
1.5
2.5
–
–
–
–
–
+150 C
MHz
Unit
mA
mA
100W
pF
V
V
140V
160V
12A
15A
6V
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NTE37 Summary of contents
Page 1
... Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de- signed for AF power amplifier and high current switching applications. Absolute Maximum Ratings: (T Collector–Emitter Voltage, V Collector–Base Voltage, V CBO Emitter– ...
Page 2
... Emitter–Base Breakdown Voltage Turn–On Time NTE36 NTE37 Fall Time NTE36 NTE37 Storage Time NTE36 NTE37 Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple- mentary pairs have their gain specification (h .190 (4.82) .787 (20.0) .591 (15.02) .787 (20.0) B NOTE: Either case style may be shipped depending on stock ...