NTE2408 NTE ELECTRONICS, NTE2408 Datasheet

Replacement Semiconductors SOT-23 NPN DRVR/OUT BULK

NTE2408

Manufacturer Part Number
NTE2408
Description
Replacement Semiconductors SOT-23 NPN DRVR/OUT BULK
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2408

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
65V
Transition Frequency Typ Ft
300MHz
Power Dissipation Pd
200mW
Dc Collector Current
100mA
Dc Current Gain Hfe
290
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BULK
Description:
The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Peak Emitter Current, I
Peak Base Current, I
Total Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R
Thermal Resistance, Tab–to–Soldering Points, R
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T
Note 2. V
Note 3. V
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Continuous
Peak
BE
BE(sat)
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
decreases by about 2mV/K with increasing temperature.
decreases by about 1.7mV with increasing temperature.
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BM
General Purpose Amp, Surface Mount
EM
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +60 C, Note 1), P
CES
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
(Compl to NTE2409)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
I
CE(sat)
V
CBO
BE
thJT
NTE2408
V
V
V
V
I
I
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CB
CB
CE
CE
= 10mA, I
= 100mA, I
tot
= 30V, I
= 30V, I
= 5V, I
= 5V, I
thTS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
E
B
= 2mA, Note 2
= 10mA, Note 2
B
= 0
= 0, T
= 0.5mA, Note 3
= 5mA, Note 3
A
= +150 C
thSA
. . . . . . . . . . . . . . . . . . . .
Min
580
Typ
660
200
90
–65 to +150 C
Max
700
770
250
600
15
5
280K/W
200mW
+150 C
100mA
200mA
200mA
200mA
60K/W
90K/W
Unit
mV
mV
mV
mV
nA
80V
80V
65V
A
6V

Related parts for NTE2408

NTE2408 Summary of contents

Page 1

... General Purpose Amp, Surface Mount Description: The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits. Absolute Maximum Ratings: Collector–Base Voltage, V CBO Collector– ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Capacitance Small–Signal Current Gain Noise Figure Note 3. V decreases by about 1.7mV with increasing temperature. BE(sat) B .074 (1.9) .118 (3.0) Max = +25 C ...

Related keywords