NTE5332 NTE ELECTRONICS, NTE5332 Datasheet

Replacement Semiconductors BRIDGE 600V 1A

NTE5332

Manufacturer Part Number
NTE5332
Description
Replacement Semiconductors BRIDGE 600V 1A
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE5332

No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.2V
Diode Mounting Type
Through Hole
Operating Temperature Range
-65°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D Glass Passivated Chip Junctions
D Surge Overload Rating: 50A (Peak)
D Ideal for Printed Circuit Board
D High Temperature Soldering Guaranteed: +285 C/10 seconds at 5 lbs., (2.3kg) tension
Maximum Ratings and Electrical Characteristics: (T
60Hz, Resistive or Inductive Load.)
Maximum Recurrent Peak Reverse Voltage, V
Maximum RMS, V
Maximum DC Blocking Voltage, V
Maximum Average Forward Output Rectified Current (T
Peak Forward Surge Current (Single Sine–Wave Superimposed on Rated Load), I
Rating for Fusing (t < 8.35ms), I
Maximum Instantaneous Forward Voltage Drop (Per element at 1A), V
Maximum Reverse Current at Rated DC Blocking Voltage Per Element, I
Typical Junction Capacitance Per Element (Note 1), C
Typical thermal Resistance (Note 2), R
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.
Note 2. Thermal Resistance from Junction to Ambient mounted on P.C. Board with 0.5” x 0.5”
NTE5332
NTE5334
NTE5332
NTE5334
NTE5332
NTE5334
T
T
A
A
(13mm x 13mm) Copper Pads.
= +25 C
= +125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
2
Silicon Bridge Rectifier, 1A
t
DC
NTE5332 & NTE5334
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
J
A
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +40 C), I
= +25 C unless otherwise specified,
O(AV)
F
. . . . . . . . . . . . . . . . . .
R
. . . . . . . . . . . . . . . . . .
FSM
–65 to +150 C
–65 to +150 C
. . . . . .
+40 C/W
500 A
1000V
1000V
10A
600V
420V
700V
600V
10 A
1.2V
25pf
50A
1A
2
s

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NTE5332 Summary of contents

Page 1

... Storage Temperature Range, T Note 1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. Note 2. Thermal Resistance from Junction to Ambient mounted on P.C. Board with 0.5” x 0.5” (13mm x 13mm) Copper Pads. NTE5332 & NTE5334 Silicon Bridge Rectifier +25 C unless otherwise specified, A RRM ...

Page 2

AC .100 (2.54) .055 (1.39) Max Seating Plane + .260 (6.6) Max AC .200 (5.08) .205 (5.2) .130 (3.3) Max .300 (7.62) ...

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