NTE175 NTE ELECTRONICS, NTE175 Datasheet
NTE175
Manufacturer Part Number
NTE175
Description
Replacement Semiconductors TO-66 NPN PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE175.pdf
(3 pages)
Specifications of NTE175
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
300V
Transition Frequency Typ Ft
15MHz
Power Dissipation Pd
35W
Dc Collector Current
2A
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package
designed for high−speed switching and linear amplifier applications for high−voltage operational am-
plifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D TO66 Type Package
D Collector−Emitter Sustaining Voltage:
D Second Breakdown Collector Current:
D Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Junction Temperature Range, T
Thermal Resistance, Junction to Case, R
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle ≤ 10%.
NTE38
NTE175
NTE38
NTE175
Continuous
Peak (Note 1)
Derate above 25°C
NTE38:
NTE175: V
NTE38
NTE175 I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
I
S/b
S/b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
CEO(sus)
High Voltage, Medium Power Switch
Silicon Complementary Transistors
= 875mA @ V
= 350mA @ V
EB
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE38 (PNP) & NTE175 (NPN)
= +25°C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 350V @ I
= 300V @ I
TO66 Type Package
CE
CE
D
stg
ΘJC
= 40V
= 100V
C
C
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200mA
= 200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65° to +200°C
−65° to +200°C
0.2W/°C
5°C/W
350V
300V
400V
500V
6Vdc
35W
2A
5A
1A
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NTE175 Summary of contents
Page 1
... High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational am- plifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. ...
Page 2
... NTE38 NTE175 Base−Emitter Saturation Voltage NTE38 NTE175 Base−Emitter ON Voltage NTE175 Only Dynamic Characteristics Current Gain −Bandwidth Product NTE38 NTE175 Output Capacitance (NTE175 Only) Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Note test C Symbol Test Conditions ...
Page 3
... Parameter Second Breakdown Second Breakdown Collector Current NTE38 NTE175 Switching Characteristics NTE38 Rise Time Storage Time Fall Time NTE175 Rise Time Storage Time Fall Time .062 (1.57) .147 (3.75) Dia (2 Places) .145 (3.7) R Max C Symbol Test Conditions (Non−Repetitive 100V ...