NTE6409 NTE ELECTRONICS, NTE6409 Datasheet

Replacement Semiconductors TO-18 UNIJUNCT TRANS

NTE6409

Manufacturer Part Number
NTE6409
Description
Replacement Semiconductors TO-18 UNIJUNCT TRANS
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE6409

Repetitive Peak Forward Current Itrm
2A
Peak Emitter Current
1µA
Valley Current Iv
10mA
Power Dissipation Pd
300mW
Operating Temperature Range
-65°C To +125°C
No. Of Pins
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 2 A Max
D Low Emitter Reverse Current: 200nA Max
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (T
Power Dissipation (Note 1), P
RMS Emitter Current, I
Peak Pulse Emitter Current (Note 2), i
Emitter Reverse Voltage, V
Interbase Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. Derate 3mW/ C increase in ambient temperature. The total power dissipation (available
Note 2. Capacitor discharge: 10 F or less, 30V or less
power to Emitter and Base–Two) must be limited by the external circuitry.
B2B1
E(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B2E
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Unijunction Transistor
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, unless otherwise specified)
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
NTE6409
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65 to +125 C
–65 to +150 C
300mW
50mA
30V
35V
2A

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NTE6409 Summary of contents

Page 1

... Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (T Power Dissipation (Note 1), P RMS Emitter Current, I ...

Page 2

Electrical Characteristics: (T Parameter Intrinsic Standoff Ratio Interbase Resistance Interbase Resistance Temperature Coefficient Emitter Saturation Voltage Modulated Interbase Current I Emitter Reverse Current Peak Point Emitter Current Valley Point Current Base–One Peak Pulse Voltage Note 3. Intrinsic Standoff Ratio, , ...

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