NTE109 NTE ELECTRONICS, NTE109 Datasheet
NTE109
Manufacturer Part Number
NTE109
Description
Replacement Semiconductors DO-7 GE FAST DIODE
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE109.pdf
(1 pages)
Specifications of NTE109
Repetitive Reverse Voltage Vrrm Max
80V
Forward Current If(av)
60mA
Forward Voltage Vf Max
1V
Forward Surge Current Ifsm Max
500mA
Diode Type
Small Signal
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
(GLASS ONLY) PKG
Description:
The NTE109 is a high conductance device with good switching characteristics for low impedance cir-
cuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and for-
ward and inverse pulse recovery for critical pulse applications.
Absolute Maximum Ratings: (T
Continuous Inverse Operating Voltage (Note 1), V
Continuous Average Forward Current, I
Peak Recurrent Forward Current (Note 2)
Forward Surge Current (1 sec), I
Electrical Characteristics:
Peak Reverse Voltage, P
Forward Voltage Drop (I
Maximum Reverse Leakage (V
Additional Specifications:
Ambient Temperature Range, T
Absolute Maximum Storage Temperature Range, T
Average Power Dissipation (T
Average Shunt Capacitance
Average 100mc Rect. Efficient
Note 1 The continuous inverse operating voltage rating, V
Note 2 The peak operating current is generally the controlling factor in AC rectifier service and may
Derate Above 25 C
operated at elevated junction temperature. The percent derating of V
perature increment above 25 C is equal to V
age applications, is recommended that diodes be 100% tested and specified at the elevated
temperature.
be exceeded for pulses of less than 200 s duration.
.022 (.509) Dia Max
F
RV
= 200mA), V
Fast Switching General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
(25.4)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.000
R
Min
A
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FSM
= 50V), I
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unles otherwise specified)
Germanium Diode
Color Band Denotes Cathode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
F
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
NTE109
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(7.63)
.300
Typ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
cont
stg
cont
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
/10. For critical high temperature–high volt-
cont
.107 (2.72) Dia Max
must be reduced when the diode is
cont
for each 10 C tem-
–78 to +100 C
–78 to +90 C
10mW/10 C
325mA
500mA
100 A
80mW
0.5 fd
60mA
100V
1.0V
55%
80V
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