NTE2380 NTE ELECTRONICS, NTE2380 Datasheet
NTE2380
Manufacturer Part Number
NTE2380
Description
Replacement Semiconductors TO-220 N-CH 500V 2A
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2380.pdf
(3 pages)
Specifications of NTE2380
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type
package designed for high voltage, high speed power switching applications such as switching regu-
lators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximim Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I
Total Power Dissipation (T
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Continuous
Pulsed
NTE2380
NTE2381
NTE2380
NTE2381
NTE2380
NTE2381
NTE2380
NTE2381
NTE2380
NTE2381
NTE2380
NTE2381
NTE2380
NTE2381
Derate Above 25 C
Derate Above 25 C
D
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Enhancement Mode, High Speed Switch
Complementary Silicon Gate MOSFETs
GS
NTE2380 (N–Ch) & NTE2381 (P–Ch)
GS
DSS
= 1M ), V
C
= +25 C), P
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stg
opr
DGR
D
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thJC
thJA
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L
–55 to +150 C
–65 to +150 C
–55 to +150 C
–65 to +150 C
0.32W/ C
62.5 C/W
3.12 C/W
1.67 C/W
0.6W/ C
+300 C
+275 C
500V
500V
2.5A
2.0A
40W
75W
20V
10A
8A
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NTE2380 Summary of contents
Page 1
... Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regu- lators, converters, solenoid, and relay drivers. ...
Page 2
... Electrical Characteristics: (T Parameter OFF Characteristics Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current NTE2380 NTE2381 NTE2380 & NTE2381 Gate–Body Leakage Current, Forward NTE2380 NTE2381 Gate–Body Leakage Current, Reverse NTE2380 NTE2381 ON Characteristics (Note 1) Gate Threshold Voltage NTE2380 NTE2381 Static Drain–Source On–Resistance ...
Page 3
... NTE2381 Source Drain Diode Characteristics (Note 1) Forward On–Voltage NTE2380 NTE2381 Forward Turn–On Time Reverse Recovery Time NTE2380 NTE2381 Internal Package Inductance Internal Drain Inductance Internal Source Inductance Note 1. Pulse Test: Pulse Width .147 (3.75) Dia Max = +25 C unless otherwise specified) ...