NTE85 NTE ELECTRONICS, NTE85 Datasheet
NTE85
Manufacturer Part Number
NTE85
Description
Replacement Semiconductors NPN 30V 500mA BULK HFE/300
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE85.pdf
(2 pages)
Specifications of NTE85
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
30V
Transition Frequency Typ Ft
100MHz
Power Dissipation Pd
625mW
Dc Collector Current
500mA
Dc Current Gain Hfe
300
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D Hi–Fi Drivers
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
Note 2. These ratings are based on a maximum junction temperature of 150 C.
Electrical Characteristics: (T
Note 3. Pulse Test: Pulse Width
Collector–Emitter Breakdown
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Voltage
Emitter Cutoff Current
Voltage
Derate Above 25 C
be impaired.
Parameter
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose Amplifier
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CBO
(BR)EBO
= +25 C unless otherwise specified)
300 s, Duty Cycle
I
I
CBO
EBO
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
NTE85
CB
BE
thJA
= 100 A, I
= 10mA, I
= 100 A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3V, I
= 20V, I
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
E
B
= 0
E
C
= 0, Note 3
= 0
2%
= 0
= 0
Min
5.0
30
50
–
–
Typ
–
–
–
–
–
–55 to +150 C
–55 to +150 C
Max Unit
100
100
5.0mW/ C
–
–
–
83.3 C/W
200 C/W
625mW
500mA
nA
nA
V
V
V
30V
50V
5V
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NTE85 Summary of contents
Page 1
... Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage V Emitter–Base Breakdown Voltage V Collector Cutoff Voltage Emitter Cutoff Current Note 3. Pulse Test: Pulse Width NTE85 Silicon NPN Transistor General Purpose Amplifier = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter DC Current Gain Base–Emitter ON Voltage Collector–Emitter Saturation Voltage Current Gain–Bandwidth Product Collector–Base Capacitance Note 3. Pulse Test: Pulse Width .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise specified) A Symbol Test ...