NTE583 NTE ELECTRONICS, NTE583 Datasheet

Replacement Semiconductors DO-35 SCHOTTKY RECT

NTE583

Manufacturer Part Number
NTE583
Description
Replacement Semiconductors DO-35 SCHOTTKY RECT
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE583.pdf (2 pages)

Specifications of NTE583

Reverse Voltage Vr
70V
Forward Current If Max
15mA
Forward Voltage Vf Max
1V
Capacitance Ct
2pF
Diode Case Style
DO-35
No. Of Pins
2
Termination Type
Axial Leaded
Diode Type
RF Schottky
Mounting Type
Through Hole
Rohs Compliant
Yes
Filter Terminals
Axial Leaded
Breakdown Voltage
70V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and
ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse appli-
cation with broad dynamic range.
Absolute Maximum Ratings: (T
Repetitive Peak Reverse Voltage, V
Forward Continuous Current (Figure 1), I
Surge Non–Repetitive Forward Current (t
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient (Figure 1), R
Figure 1
* d = 4mm
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
stg
Silicon Rectifier Diode
d
A
Schottky, RF Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, Limiting Values)
RRM
Infinite heat sinks
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
F
p
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE583
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1s, Figure 1), I
thJA
FSM
. . . . . . . . . . . . . . . . . . . . . . . .
d
. . . . . . . . . . . . . . . . . . . . . . . .
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
Ç Ç Ç Ç Ç Ç
–65 to +200 C
–65 to +200 C
400 C/W
15mA
50mA
70V

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NTE583 Summary of contents

Page 1

... Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse appli- cation with broad dynamic range. Absolute Maximum Ratings: (T Repetitive Peak Reverse Voltage, V Forward Continuous Current (Figure 1), I Surge Non– ...

Page 2

Electrical Characteristics: (T Parameter Static Characteristics Breakdown Voltage Continuous Forward Voltage Continuous Reverse Current Dynamic Characteristics Small Signal Capacitance Minority Carrier Life Time Note 1. Pulse Test t 300 s p .022 (.509) Dia Max = +25 C unless otherwise ...

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