NTE261 NTE ELECTRONICS, NTE261 Datasheet
NTE261
Manufacturer Part Number
NTE261
Description
Replacement Semiconductors TO-220 NPN DAR PWR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE262.pdf
(2 pages)
Specifications of NTE261
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
65W
Dc Collector Current
5A
Dc Current Gain Hfe
2500
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Unclamped Inductive Load Energy (Note 1), E
Operating Junction Temperature range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. I
Continuous
Peak
Derate Above 25 C
Derate Above 25 C
C
V
= 1A, L = 100mH, P.R.F. = 10Hz, V
CE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 2V Max @ I
= 4V Max @ I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
A
CB
C
NTE261 (NPN) & NTE262 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
= 2500 Typ @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3A
= 5A
D
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
thJA
CC
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4A
= 20V, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V Min @ 100mA
BE
= 100 .
–65 to +150 C
–65 to +150 C
0.016W/ C
0.52W/ C
1.92 C/W
62.5 C/W
120mA
50mJ
100V
100V
65W
2W
5V
5A
8A
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NTE261 Summary of contents
Page 1
... NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain Collector–Emitter Sustaining Voltage Low Collector– ...
Page 2
... Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Output Capacitance NTE261 NTE262 Note 2. Pulse Test: Pulse Width NTE261 B NTE262 B = +25 C unless otherwise specified) C Symbol Test Conditions 100mA, I CEO(sus) ...