NTE102 NTE ELECTRONICS, NTE102 Datasheet

Replacement Semiconductors TO-5 PNP PWROUT DRVR

NTE102

Manufacturer Part Number
NTE102
Description
Replacement Semiconductors TO-5 PNP PWROUT DRVR
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE102

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-24V
Power Dissipation Pd
150mW
Dc Collector Current
-150mA
Dc Current Gain Hfe
90
Operating Temperature Range
-65°C To +100°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
dium–speed saturated switching applications.
Features:
D Low Collector–Emitter Saturation Voltage:
D High Emitter–Base Breakdown Voltage:
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Emitter Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Junction Temperature Range, T
Electrical Characteristics: (T
Note 1. V
OFF Characteristics
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Punch–Through Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
V
Derate Above +25
Derate Above +25
CE(sat)
(BR)EBO
with 11M minimum input impedance. The Collector–Base Voltage, V
V
PT
EBfl
Parameter
is determined by measuring the Emitter–Base floating potential V
= 1V; this value of V
= 200mV Max @ I
= 12V Min @ I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Germanium Complementary Transistors
EBO
CBO
A
C
NTE102 (PNP) & NTE103 (NPN)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 20 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Output, Driver
V
V
CB
= 24mA
Symbol
(BR)CBO
(BR)EBO
I
I
V
CBO
EBO
PT
= (V
stg
D
D
J
PT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
E
EBfl
CB
CB
EB
+ 1).
= 20 A, I
= 20 A, I
= 2.5V, I
= 12V, I
= 12V, I
= 1V, Note 1
Test Conditions
E
C
E
E
C
= 0
= 0
= 0
= 0, T
= 0
A
= +80 C
Min
25
12
24
EBfl
CB
, using a voltmeter
, is increased until
Typ
0.8
0.5
20
–65 to +100 C
–65 to +100 C
Max
5.0
2.5
90
2mW/ C
4mW/ C
150mW
300mW
150mA
100mA
Unit
V
V
V
25V
24V
12V
A
A
A

Related parts for NTE102

NTE102 Summary of contents

Page 1

... NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me- dium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage 200mV Max @ I CE(sat) D High Emitter–Base Breakdown Voltage 12V Min @ I ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage Small–Signal Characteristics Alpha Cutoff Frequency Output Capacitance Input Impedance Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Switching Characteristics Delay Time Rise Time Storage Time ...

Related keywords