NTE916 NTE ELECTRONICS, NTE916 Datasheet

NTE916

Manufacturer Part Number

NTE916

Description

Replacement Semiconductors DIP-16 COM EM ARRAY

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE916.pdf (2 pages)

Specifications of NTE916

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

16V

Power Dissipation Pd

750mW

Dc Collector Current

100mA

Dc Current Gain Hfe

Operating Temperature Range

-55Â°C To +125Â°C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description:

The NTE916 is a high current transistor array in a 16–Lead DIP type package consisting of seven

silicon NPN transistors on a common monolithic substrate connected in a common–emitter config-

uration designed for directly driving seven–segment displays and light–emitting diodes (LED) dis-

plays. This device is also well suited for a variety of other drive applications including relay control

and thyristor firing.

Features:

D Seven Transistors Permit a Wide Range of Applications

D High Collector Current: I

D Low Collector–Emitter Saturation Voltage: V

Absolute Maximum Ratings: (T

Power Dissipation (Total Package), P

Operating Ambient Temperature Range, T

Storage Temperature Range, T

Lead Temperature (During Soldering, 1/16” from case, 10sec max), T

The Following Ratings Apply for Each Transistor in the Device

Collector–Emitter Voltage, V

Collector–Base Voltage, V

Collector–Substrate Voltage (Note 1), V

Emitter–Base Voltage, V

Collector Current, I

Base Current, I

Note 1. The collector of each transistor of the NTE916 is isolated from the substrate by an integral

Per Transistor

diode. The substrate must be connected to a voltage which is more negative that any collec-

tor voltage in order to maintain isolation between transistors and provide normal transistor

action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)

should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can

be used to establish a signal ground.

Derate Linearly Above 55 C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

High Current, NPN Transistor Array,

EBO

CBO

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 100mA Max

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25 C unless otherwise specified)

Integrated Circuit

Common Emitter

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CIO

NTE916

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CE(sat)

= 400mV Typ @ 50mA

. . . . . . . . . . . . . . . . .

–55 to +125 C

–65 to +150 C

6.67mW/ C

750mW

500mW

+265 C

100mA

20mA

16V

20V

Related parts for NTE916

NTE916 Summary of contents

Page 1

... B Note 1. The collector of each transistor of the NTE916 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative that any collec- tor voltage in order to maintain isolation between transistors and provide normal transistor action ...

Page 2

Electrical Characteristics: (T Parameter Collector–Base Breakdown Voltage Collector–Substrate Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage DC Forward Current Transfer Ratio Base–Emitter Saturation Voltage Collector–Emitter Saturation Voltage Collector Cutoff Current 16 .245 (6.22) Min = +25 C unless otherwise specified) ...

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