NTE192A NTE ELECTRONICS, NTE192A Datasheet
NTE192A
Manufacturer Part Number
NTE192A
Description
Replacement Semiconductors TO-92 NPN AU PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE193.pdf
(2 pages)
Specifications of NTE192A
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
900mW
Dc Collector Current
500mA
Dc Current Gain Hfe
180
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current (Note 1), I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” 1/32” from case for 10sec max), T
Note 1. Determined from power limitations due to saturation voltage at this current.
Electrical Characteristics: (T
DC Characteristics
Collector Cutoff Current
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
Derate Above 25 C
Derate Above 25 C
Parameter
Silicon Complementary Transistors
EBO
NTE192A (NPN) & NTE193A (PNP)
A
CBO
C
NTE192 (NPN) & NTE193 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C, Note 1), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
I
CE(sat)
I
BE(sat)
h
Audio Power Output
CBO
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
T
V
V
V
I
I
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
B
CB
CB
EB
CE
= 3mA, I
= 3mA, I
= 5V
= 50V
= 50V, T
= 4.5V, I
T
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
A
= 50mA
= 50mA
C
= +100 C
= 2mA
Min
180
–
–
–
–
–
L
Typ Max
–
–
–
–
–
–
. . . . . . . .
–55 to +150 C
0.30
0.85
540
0.1
0.1
15
4.47mW/ C
7.2mW/ C
900mW
560mW
+150 C
+260 C
500mA
Unit
V
V
A
A
A
50V
50V
5V
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NTE192A Summary of contents
Page 1
... Silicon Complementary Transistors Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits in industrial control applications ...
Page 2
... Dia .017 (0.45) Dia .100 (2.54) .050 (1.27 Min Typ Max 180 – – 150 – 300 4200 – 8300 10 – 20 0.2 – 0.4 .187 (4.76) .156 (3.95) .127 (3.25) Pin Number 1 2 NTE192/193 C B NTE192A/193A B C Unit mhos – ...