NTE2973 NTE ELECTRONICS, NTE2973 Datasheet

Replacement Semiconductors MOSFET-N-CHAN

NTE2973

Manufacturer Part Number
NTE2973
Description
Replacement Semiconductors MOSFET-N-CHAN
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2973

Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
630mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (T
Drain–Source Voltage (V
Gate–Source Voltage (V
Drain Current, I
Maximum Power Dissipation, P
Channel Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Channel–to–Case, R
Electrical Characteristics: (T
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
Continuous
Pulsed
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
GS
N–Channel, Enhancement Mode
= 0V), V
= 0V), V
V
V
stg
ch
Symbol
D
R
ch
V
V
(BR)DSS
(BR)GSS
I
I
DS(on)
DS(on)
GS(th)
|y
GSS
DSS
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
High Speed Switch
= +25 C unless otherwise specified)
GS
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS
DS
GS
DS
DS
GS
GS
GS
th(ch–c)
NTE2973
MOSFET
= 0V, I
= 0V, I
= 900V, V
= 10V, I
= 25V, V
= 10V, I
= 10V, I
= 10V, I
D
G
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
D
D
= 1mA
= 100 A
= 1mA
GS
= 7A
= 7A
= 7A
DS
= 0V
= 0
Min
900
2.0
30
9
0.63
4.41
Typ
3.0
15
–55 to +150 C
–55 to +150 C
Max
0.85
5.95
1.0
4.0
10
0.45 C/W
275W
900V
Unit
mA
V
V
V
V
S
30V
14A
42A
A

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NTE2973 Summary of contents

Page 1

... Parameter Drain–Source Breakdown Voltage Gate–Source Breakdown Voltage Gate–Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain–Source ON Resistance Drain–Source On–State Voltage Forward Transfer Admittance NTE2973 MOSFET High Speed Switch = +25 C unless otherwise specified 0V DSS = 0V), V ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Diode Forward Voltage .190 (4.82) .787 (20.0) = +25 C unless otherwise specified) ch Symbol Test Conditions C ...

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