NTE324 NTE ELECTRONICS, NTE324 Datasheet
NTE324
Manufacturer Part Number
NTE324
Description
Replacement Semiconductors TO-39 NPN GP AMP/SW
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE323.pdf
(2 pages)
Specifications of NTE324
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
4V
Transition Frequency Typ Ft
30MHz
Power Dissipation Pd
10W
Dc Collector Current
1A
Dc Current Gain Hfe
40
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector–Base Voltage (I
Collector–Emitter Voltage, V
Emitter–Base Voltage (I
Collector Current, I
Base Current, I
Total Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse Duration = 300 s, Duty Cycle
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage
T
T
A
C
= +25 C
= +25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
E
= 0), V
tot
NTE323 (PNP) & NTE324 (NPN)
= 0), V
CEO
stg
C
Symbol
EBO
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
CE(sat)
I
I
I
I
CBO
CBO
CEO
CEV
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
I
I
I
I
C
C
C
C
CE
CB
CE
CE
EB
thJC
= 10mA, I
= 250mA, I
= 500mA, I
= 1A, I
= 120V, V
= 4V, I
= 120V, I
= 80V, I
= 120V, V
thJA
2%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 200mA, Note 1
B
B
= 0
E
B
B
BE
= 0
= 0, Note 1
BE
= 0
= 25mA, Note 1
= 50mA, Note 1
= –1.5V, T
= –1.5V
C
= +150 C
Min
120
–
–
–
–
–
–
–
–
Typ Max Unit
–
–
–
–
–
–
–
–
–
–65 to +200 C
0.6
1.0
2.0
10
1
1
1
1
–
17.4 C/W
175 C/W
+200 C
500mA
120V
120V
mA
10W
V
V
V
V
A
A
A
A
1W
4V
1A
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NTE324 Summary of contents
Page 1
... NTE323 (PNP) & NTE324 (NPN) Silicon Complementary Transistors Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Voltage DC Current Gain Transition Frequency Collector–Base Capacitance Small–Signal Current Gain Note 1. Pulse Duration = 300 s, Duty Cycle Emitter = +25 C unless otherwise specified) C Symbol Test Conditions ...