NTE103A NTE ELECTRONICS, NTE103A Datasheet
NTE103A
Manufacturer Part Number
NTE103A
Description
Replacement Semiconductors TO-1 MED PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE103A.pdf
(2 pages)
Specifications of NTE103A
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
32V
Power Dissipation Pd
175W
Dc Collector Current
15A
Dc Current Gain Hfe
69
No. Of Pins
3
Power (ptot)
175W
Package / Case
3-TO-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type
package designed for use as a medium power amplifier.
Absolute Maximum Ratings: (T
Collector-Base Voltage, V
Emitter-Base Voltage, V
Collector Current, I
Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector-Base Voltage
Collector Cutoff Current
DC Current Gain
Common-Emitter Cutoff Frequency
Collector-Emitter Saturation Voltage
Noise Figure
Parameter
C
Germanium Complementary Transistors
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
NTE102A (PNP) & NTE103A (NPN)
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
Medium Power Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
A
Symbol
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
V
I
h
h
CE(sat)
CBO
NF
f
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE1
FE2
αe
I
V
V
V
V
I
V
C
C
CB
CB
CB
CB
CB
= 200μA, I
= 500mA, I
= 10V, I
= 0, I
= 0, I
= 2V, I
= 5V, I
Test Conditions
E
E
E
E
= 300mA
= 50mA
E
= 10mA
= 5mA, f = 1kHz
E
B
= 0
= 0
= 50mA
Min
32
63
69
10
-
-
-
0.17
Typ
-
-
-
-
-
-
-55° to +90°C
Max Unit
295
273
25
25
-
-
-
650mW
+90°C
kHz
μA
dB
V
V
32V
10V
1A
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NTE103A Summary of contents
Page 1
... NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (T Collector-Base Voltage, V CBO Emitter-Base Voltage, V EBO Collector Current, I ...
Page 2
Emitter .240 (6.09) Dia Max .410 (10.4) Max .750 (19.1) Min .071 (1.82) Dia Base Collector ...