NTE2329 NTE ELECTRONICS, NTE2329 Datasheet
NTE2329
Manufacturer Part Number
NTE2329
Description
Replacement Semiconductors PNP AUDIO PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2328.pdf
(2 pages)
Specifications of NTE2329
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
3V
Transition Frequency Typ Ft
25MHz
Power Dissipation Pd
150W
Dc Collector Current
15A
Dc Current Gain Hfe
160
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (T
Collector−Base Voltage, V
Collector−Emitter Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
Collector−Emitter Breakdown Voltage V
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Voltage
Transistion Frequency
Collector Output Capacitance
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
NTE2328 (NPN) & NTE2329 (PNP)
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO3PBL Type Package
= +25°C unless otherwise specified)
A
Audio Power Output
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25°C unless otherwise specified)
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
(BR)CEO
I
h
h
CE(sat)
I
V
C
CBO
EBO
FE1
FE2
f
BE
T
ob
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
I
V
V
I
V
V
V
C
C
CB
BE
CE
CE
CE
CE
CB
= 50mA, I
= 10A, I
= 200V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Conditions
B
C
C
C
C
C
B
= 1A
E
= 0
= 1A
= 8A
= 8A
= 1A
E
= 0, f = 1MHz
= 0
= 0
Min
200
55
35
−
−
−
−
−
−
Typ
470
1.5
1.0
60
25
−
−
−
−
−55° to +150°C
Max Unit
160
5.0
5.0
3.0
1.5
−
−
−
−
+150°C
150W
MHz
200V
200V
μA
μA
1.5A
pF
V
V
V
15A
5V
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NTE2329 Summary of contents
Page 1
... NTE2328 (NPN) & NTE2329 (PNP) Silicon Complementary Transistors Features: D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (T Collector−Base Voltage, V CBO Collector−Emitter Voltage, V Emitter−Base Voltage, V EBO Collector Current Base Current Collector Power Dissipation (T Operating Junction Temperature, T ...
Page 2
Dia Max .215 (5.45) B Note: Collector connected to heat sink. .204 (5.2) Max 1.030 (26.16) .098 .787 (2.5) (20.0) .040 (1. .023 (0.6) ...