Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D R
D +175 C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, I
Total Power Dissipation (T
Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Mounting Torque, 6–32 or M3 Screw
Thermal Resistance:
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 444 H, V
Note 3. I
DS
Continuous (V
Pulsed (Note 1)
Derate Above 25 C
Maximum Junction–to–Case, R
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
(on) Specified at V
SD
T
T
C
C
= +25 C
= +100 C
17A, di/dt
D
GS
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V)
GS
= 25V, R
GS
N–Channel, Enhancement Mode
C
140A/ s, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4V & 5V
stg
G
Logic Level MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
= 25 , Starting T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
thJC
D
J
NTE2984
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
J
= +175 C.
+175 C.
thJA
. . . . . . . . . . . . . . . . . . . . .
L
thCS
. . . . . . . . . .
10 lbf in (1.1 N m)
. . . . . . .
–55 to +175 C
–55 to +175 C
0.40W/ C
4.5V/ns
+300 C
2.5K/W
0.5K/W
62K/W
110mJ
60W
17A
12A
68A
10V