NTE2984 NTE ELECTRONICS, NTE2984 Datasheet

Replacement Semiconductors TO-220 N-CH 60V 17A

NTE2984

Manufacturer Part Number
NTE2984
Description
Replacement Semiconductors TO-220 N-CH 60V 17A
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2984

Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D R
D +175 C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, I
Total Power Dissipation (T
Gate–Source Voltage, V
Single Pulsed Avalanche Energy (Note 2), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Mounting Torque, 6–32 or M3 Screw
Thermal Resistance:
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 444 H, V
Note 3. I
DS
Continuous (V
Pulsed (Note 1)
Derate Above 25 C
Maximum Junction–to–Case, R
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
(on) Specified at V
SD
T
T
C
C
= +25 C
= +100 C
17A, di/dt
D
GS
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V)
GS
= 25V, R
GS
N–Channel, Enhancement Mode
C
140A/ s, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4V & 5V
stg
G
Logic Level MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
= 25 , Starting T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
thJC
D
J
NTE2984
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
J
= +175 C.
+175 C.
thJA
. . . . . . . . . . . . . . . . . . . . .
L
thCS
. . . . . . . . . .
10 lbf in (1.1 N m)
. . . . . . .
–55 to +175 C
–55 to +175 C
0.40W/ C
4.5V/ns
+300 C
2.5K/W
0.5K/W
62K/W
110mJ
60W
17A
12A
68A
10V

Related parts for NTE2984

NTE2984 Summary of contents

Page 1

... Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R Maximum Junction–to–Ambient (Free Air Operation), R Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 444 25V Note 3. I 17A, di/dt 140A NTE2984 Logic Level MOSFET High Speed Switch = 4V & +25 C ...

Page 2

Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain–Source ON Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–Source Leakage Forward Gate–Source Leakage Reverse Total Gate Charge Gate–Source Charge Gate–Drain (“Miller”) Charge Turn–On Delay Time ...

Page 3

Max .147 (3.75) Dia Max .070 (1.78) Max Gate .100 (2.54) .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...

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