NTE5405 NTE ELECTRONICS, NTE5405 Datasheet
NTE5405
Manufacturer Part Number
NTE5405
Description
Replacement Semiconductors TO-92 400V 0.8A SCR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5400.pdf
(2 pages)
Specifications of NTE5405
Peak Repetitive Off-state Voltage, Vdrm
400V
Gate Trigger Current Max, Igt
0.2mA
On State Rms Current It(rms)
800mA
Peak Non Rep Surge Current Itsm 50hz
8A
Holding Current Max Ih
5mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional
gate controlled rectifiers (SCR−thyristor) rated at 0.8 amps RMS maximum on−state current, with
rated voltages up to 600 volts.
These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge ca-
pabilities.
Available in a TO92 plastic package, these devices feature excellent environmental stress and tem-
perature cycling characteristics and, coupled with their small size and electrical performance, lend
themselves to various types of control functions encountered with sensors, motors, lamps, relays,
counters, triggers, etc.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off−State Voltage (T
RMS On−State Current, I
Peak Surge (Non−Repetitive) On−State Current (One Cycle at 50 or 60Hz), I
Peak Gate−Trigger Current (3μs Max), I
Peak Gate−Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
Typical Thermal Resistance, Junction−to−Ambient, R
NTE5400
NTE5401
NTE5402
NTE5403
NTE5404
NTE5405
NTE5406
NTE5400
NTE5401
NTE5402
NTE5403
NTE5404
NTE5405
NTE5406
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Silicon Controlled Rectifier (SCR)
T(RMS)
0.8 Amp Sensitive Gate, TO92
stg
GT
NTE5400 thru NTE5406
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
≤ I
G(AV)
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +100°C), V
= +100°C), V
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3μs Max), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRXM
thJA
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GM
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TSM
. . . . . . . . . . . .
−40° to +100°C
−40° to +150°C
+200°C/W
200mW
+5°C/W
500mA
100V
150V
200V
400V
600V
100V
150V
200V
400V
600V
0.8A
20W
30V
60V
30V
60V
8A
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NTE5405 Summary of contents
Page 1
... NTE5405 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Parameter Peak Off−State Current Maximum On−State Voltage DC Holding Current DC Gate−Trigger Current DC Gate−Trigger Voltage for Fusing Reference Critical Rate of Applied Forward Voltage .105 (2.67) Max .205 (5.2) Max Symbol Test Conditions ...