NTE2018 NTE ELECTRONICS, NTE2018 Datasheet

Replacement Semiconductors DIP-18 8-CH DAR ARRY

NTE2018

Manufacturer Part Number

NTE2018

Description

Replacement Semiconductors DIP-18 8-CH DAR ARRY

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2018.pdf (3 pages)

Specifications of NTE2018

Module Configuration

Eight

Collector Emitter Voltage V(br)ceo

50V

Power Dissipation Pd

2.25W

Dc Collector Current

600mA

Dc Current Gain Hfe

1000

Operating Temperature Range

-20Â°C To +85Â°C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Description:

Ideally suited for interfacing between low−level digital logic circuitry and high−power peripheral loads,

the NTE2011 through NTE2015 are high−voltage, high−current Darlington arrays in an 18−Lead DIP

type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or 750mA

(NTE2017, NTE2018, NTE2020) for each of the eight drivers in each device. Under the proper condi-

tions, high−power loads up to 4A at 50V (200W at 23% duty cycle) or 3.2A at 95V (304W at 33% duty

cycle) can be controlled. Typical loads include relays, solenoids, stepping motors, multiplexed LED

and incadescent displays, and heaters. All devices feature open collector outputs and integral diodes

for inductive load transient suppression.

The NTE2016 is a general purpose array that may be used with standard bi−polar digital logic using

external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs

opposite inputs to facilitate printed wiring board layouts.

The NTE2017 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and

resistor in series to limit the input current to a safe value in that application. The Zener diode also gives

this deVicee excellent noise immunity.

The NTE2018 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly

with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface

needs − particularly those beyond the capabilities of standard logic buffers.

The NTE2019 has a 10.5kΩ series input resistor that permits operation directly from CMOS or PMOS

outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2018,

while the required input voltage is less than that required by the NTE2017.

The NTE2020 is designed for use with standard TTL and Schottky TTL, with which higher output cur-

rents are required and loading of the logic output is not a concern. This device will sink a minimum

of 350mA when driven from a “totem pole” logic output.

Absolute Maximum Ratings: (T

Output Voltage, V

Input Voltage, V

Continuous Collector Current. I

Continuous Base Current, I

Power Dissipation, P

Operating Ambient Temperature Range, T

Storage Temperature Range, T

Note 1. NTE2017 and NTE2020 are discontinued devices and no longer available.

Note 2. Derate at the rate of 18.18mW/°C above +25°C.

Note 3. Under normal operating conditions, these devices will sustain 350mA per output with

NTE2017, NTE2018, NTE2019

NTE2020

NTE2016, NTE2019

NTE2017, NTE2018, NTE2020

One Darlington Pair

Total Device (Note 2)

CE(sat)

NTE2016/NTE2017/NTE2018/NTE2019/NTE2020

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 1.6V at +50°C with a pulse width of 20ms and a duty cycle of 40%.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8−Channel Darlington Array/Driver

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

= +25°C for any one Darlington pair unless otherwise specified)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Integrated Circuit

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−55° to +150°C

−20° to +85°C

500mA

600mA

2.25W

25mA

50V

30V

15V

Related parts for NTE2018

NTE2018 Summary of contents

Page 1

... The NTE2019 has a 10.5kΩ series input resistor that permits operation directly from CMOS or PMOS outputs utilizing supply voltages 15V. The required input current is below that of the NTE2018, while the required input voltage is less than that required by the NTE2017. ...

Page 2

... 350mA 200mA, I NTE2017 C NTE2018 NTE2018 I = 350mA NTE2020 NTE2020 I = 500mA NTE2017 V = 17V IN(ON) IN NTE2018 V = 3.85V IN NTE2019 12V IN NTE2020 All I = 500µA, T IN(OFF NTE2017 V = 2V, I IN(ON NTE2018 NTE2019 NTE2020 NTE2011 All IN t All 0 0.5 E PLH in t All ...

Page 3

Pin Connection Diagram Input 1 Input 2 Input 3 Input 4 Input 5 Input 6 Input 7 Input 8 GND 9 10 .945 (24.0) .100 (2.54) .800 (20.32 Output Output Output 3 ...

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