NTE912 NTE ELECTRONICS, NTE912 Datasheet

NTE912

Manufacturer Part Number

NTE912

Description

Replacement Semiconductors DIP-14 CP TRAN ARRAY

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE912.pdf (3 pages)

Specifications of NTE912

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

15V

Transition Frequency Typ Ft

550MHz

Power Dissipation Pd

750mW

Dc Collector Current

50mA

Dc Current Gain Hfe

100

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description:

The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic sub-

strate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differ-

entially–connected pair.

The transistors of the NTE912 are well suited to a wide variety of applications in low power systems

in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How-

ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec-

trical and thermal matching.

Features:

D Two Matched Pairs of Transistors:

D 5 General Purpose Monolithic Transistors

D Operation from DC to 120MHz

D Wide Operating Current Range

D Low Noise Figure: 3.2dB Typ @ 1kHz

Applications:

D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency

D Custom Designed Differential Amplifiers

D Temperature Compensated Amplifiers

Absolute Maximum Ratings: (T

Power Dissipation (T

Collector Emitter Voltage, V

Collector Base Voltage, V

Collector Substrate Voltage (Note 1), V

Emitter Base Voltage, V

Collector Current, I

Operating Temperature Range, T

Storage Temperature Range, T

Lead Temperature (During Soldering, 1/16” 1/32” from case, 10sec max), T

Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-

Range from DC to VHF

Each Transistor

Total Package

(Three Isolated Transistors and One Differentially–Connected Transistor Pair)

strate (Pin13) must be connected to the most negative point in the external circuit to maintain

isolation between transistors and to provide for normal transistor action.

Input Offset Current 2 A Max. @ I

Derate Above 55 C

matched 5mV

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EBO

+55 C), P

General Purpose Transistor Array

CBO

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

opr

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25 C unless otherwise specified)

Integrated Circuit

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CIO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE912

= 1mA

. . . . . . . . . . .

–55 to +125 C

–65 to +150 C

6.67mW/ C

300mW

750mW

+265 C

50mA

15V

20V

Related parts for NTE912

NTE912 Summary of contents

Page 1

... DIP type package. Two of the transistors are internally connected to form a differ- entially–connected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How- ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec- trical and thermal matching ...

Page 2

Electrical Characteristics: (T Parameter Static Characteristics Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Collector Substrate Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Static Forward Current Transfer Ratio Input Offset Current for Matched Pair . |I – I ...

Page 3

Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics (Cont’d) Gain–Bandwidth Product Emitter Base Capacitance Collector Base Capacitance Collector Substrate Capacitance 14 1 .785 (19.95) .600 (15.24) = +25 C unless otherwise specified) A Symbol Test Conditions 3V, I ...

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