NE663M04-EVPW08 CEL, NE663M04-EVPW08 Datasheet

NE663M04-EVPW08

Manufacturer Part Number

NE663M04-EVPW08

Description

RFID Modules & Development Tools For NE663M04-A Power at 800 MHz

Manufacturer

CEL

Datasheet

1.NE663M04-T2-A.pdf (10 pages)

Specifications of NE663M04-EVPW08

Product

RFID Readers

Dimensions

15 mm x 15 mm x 0.6 mm

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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• HIGH GAIN BANDWIDTH: f

• HIGH POWER GAIN: IS

• LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz

• HIGH IP3: NF = 27 dBm at 2 GHz

• HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz

• LOW PROFILE M04 PACKAGE:

NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz f

wafer process. With a typical transition frequency of 19 GHz

the NE663M04 is usable in applications from 100 MHz to 5

GHz. The NE663M04 provides excellent low voltage/low

current performance.

NEC's low profile/flat lead style "M04" package is ideal for

today's portable wireless applications. The NE663M04 is an

ideal choice for LNA and oscillator requirements in all mobile

communication systems.

ELECTRICAL CHARACTERISTICS

FEATURES

DESCRIPTION

Notes:

SOT-343 footprint, with a height of just 0.59 mm.

Flat Lead Style for better RF performance.

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

4. MSG =

5. Collector current at P1dB compression.

SYMBOLS

P1dB

MSG

Cre

CBO

EBO

21E

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain

Gain Bandwidth at V

Insertion Power Gain at V

Maximum Stable Gain

Output Power at 1 dB compression point at

Third Order Intercept Point at V

Noise Figure at V

Feedback Capacitance

= 2 V, I

21E

= 11 dB TYP at 2 GHz

= 15 GHz

= 70 mA

PARAMETERS AND CONDITIONS

EIAJ

FREQUENCY TRANSISTOR

= 2 V, I

PACKAGE OUTLINE

, f = 2 GHz

at V

REGISTERED NUMBER

= 3 V, I

at V

PART NUMBER

at V

= 2 V, I

= 10 mA, f = 2 GHz, Z

= 1 V, I

= 2 V, I

= 5 V, I

= 2 V, I

= 90 mA, f = 2 GHz

= 25°C)

= 2 V, I

= 50 mA, f = 2 GHz

= 0

NPN SILICON HIGH

= 10 mA

= 50 mA, f = 2 GHz

= 0

= 0, f = 1 MHz

= 70 mA, f = 2 GHz

= Z

M04

OPT

California Eastern Laboratories

UNITS

dBm

GHz

µA

MIN

NE663M04

2SC5509

M04

TYP

1.2

0.5

MAX

0.75

100

0.6

1.7

Related parts for NE663M04-EVPW08

NE663M04-EVPW08 Summary of contents

Page 1

... DESCRIPTION NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz f wafer process. With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low current performance. NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications ...

Page 2

... PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base ORDERING INFORMATION PART NUMBER QUANTITY NE663M04-T2-A 3000 1 TYPICAL NOISE PARAMETERS (T = 25°C) A UNITS RATINGS FREQ. (GHz 3 1.5 0.90 1.00 mA 100 1.20 ...

Page 3

... CE freq MHz 4.0 5.0 (V) CE NE663M04 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.000 200.0 400.0 600.0 800.0 1.000 Base to Emitter Voltage FORWARD CURRENT vs. COLLECTOR CURRENT ...

Page 4

TYPICAL PERFORMANCE CURVES MAXIMUM STABLE GAIN, INSERTION POWER GAIN, MAXIMUM AVAILABLE GAIN vs. FREQUENCY MSG MAG 21e 5 0 0.1 1.0 Frequency, f (GHz) MAXIMUM STABLE GAIN, INSERTION POWER GAIN, ...

Page 5

TYPICAL PERFORMANCE CURVES NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 GHz 5.0 4 3.0 2.0 1 Collector Current, l (mA) C NOISE FIGURE AND ...

Page 6

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 GHz -j25 GHz -j50 NE663M04 FREQUENCY S 11 GHz MAG ANG 0.10 0.797 -25.94 0.20 0.770 -51.57 0.30 0.745 -73.20 0.40 0.722 -91.15 0.50 0.706 -106.11 0.70 0.686 -128.20 1.00 0.671 -150.55 1.50 0.645 -176 ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 S 22 -j10 18 GHz GHz -j25 -j50 NE663M04 FREQUENCY S 11 GHz MAG ANG 0.10 0.663 -39.80 0.20 0.648 -74.35 0.30 0.643 -99.34 0.40 0.640 -117.52 0.50 0.639 -131.00 0.70 0.639 -149.50 1.00 0.638 -167.32 1.50 ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 S 11 0.1 GHz -j10 18 GHz 0.1 GHz GHz -j25 -j50 NE663M04 FREQUENCY S 11 GHz MAG ANG 0.10 0.511 -62.59 0.20 0.556 -103.21 0.30 0.588 -126.41 0.40 0.604 -141.09 0.50 0.614 -151.41 0.70 0.624 -165.36 1 ...

Page 9

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 0.1 GHz S -j10 22 18 GHz 0.1 GHz GHz -j25 -j50 NE663M04 FREQUENCY S 11 GHz MAG ANG 0.10 0.398 -104.22 0.20 0.528 -136.04 0.30 0.582 -151.58 0.40 0.606 -161.14 0.50 0.618 -167.97 0.70 0.629 -177.73 1 ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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