PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 11

• Manufacturer Part Number: PSMN1R8-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL,127

• Input Capacitance (ciss) @ Vds: 10180pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5234

NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT78 (TO-220AB)
PSMN1R8-30PL
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT
mm
VERSION
OUTLINE
SOT78
4.7
4.1
A
1.40
1.25
A
1
0.9
0.6
b
IEC
b
1.6
1.0
1
(2)
D
L
b
1.3
1.0
L
2
D
1
(2)
(1)
1
b
b
3-lead TO-220AB
(3×)
(2×)
1
2
(2)
(2)
0.7
0.4
JEDEC
c
All information provided in this document is subject to legal disclaimers.
1
16.0
15.2
REFERENCES
e
D
E
p
Rev. 02 — 2 November 2010
2
e
6.6
5.9
D
0
1
3
10.3
JEITA
SC-46
b(3×)
9.7
E
L
scale
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
2
q
5
(1)
2.54
e
15.0
12.8
10 mm
L
mounting
L
3.30
2.79
base
1
(1)
max.
L
3.0
2
(1)
Q
PSMN1R8-30PL
A
3.8
3.5
p
A
PROJECTION
EUROPEAN
1
c
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
08-04-23
08-06-13
SOT78
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