PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN1R8-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL,127

• Input Capacitance (ciss) @ Vds: 10180pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5234

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R8-30PL
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
-4
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
0.2
0.02
0.05
Thermal characteristics
0.1
δ = 0.5
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 2 November 2010
Conditions
see
10
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
-3
Figure 4
10
-2
PSMN1R8-30PL
Min
-
P
10
-1
t
p
Typ
0.3
T
t
© NXP B.V. 2010. All rights reserved.
p
(s)
δ =
003aad080
Max
0.56
T
t
p
t
1
Unit
K/W
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