PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R8-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL,127

• Input Capacitance (ciss) @ Vds: 10180pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5234

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
[1]
PSMN1R8-30PL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
Measured 3 mm from package.
100
(A)
I
D
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
3
10
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
3.5
1
…continued
2
V
GS
V
All information provided in this document is subject to legal disclaimers.
(V) = 2.8
DS
003aad394
(V)
2.6
2.4
Rev. 02 — 2 November 2010
Conditions
V
R
I
see
I
V
S
S
3
DS
GS
G(ext)
= 25 A; V
= 30 A; dI
Figure 17
= 12 V; R
= 0 V; V
= 4.7 Ω
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
GS
S
DS
/dt = -100 A/µs;
L
Fig 6.
= 0 V; T
= 0.5 Ω; V
= 12 V
(A)
100
I
D
80
60
40
20
0
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
j
0
= 25 °C;
GS
= 4.5 V;
1
T
j
= 175 °C
PSMN1R8-30PL
Min
-
-
-
-
-
-
-
2
Typ
92
156
135
69
0.7
64
60
T
j
= 25 °C
3
© NXP B.V. 2010. All rights reserved.
V
003aad396
GS
-
Max
-
-
-
1.2
-
-
(V)
4
Unit
ns
ns
ns
ns
V
ns
nC
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