PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN1R8-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL,127

• Input Capacitance (ciss) @ Vds: 10180pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5234

NXP Semiconductors
PSMN1R8-30PL
Product data sheet
Fig 7.
Fig 9.
18000
(pF)
16000
14000
12000
10000
R
(mΩ)
C
8000
DSon
8
6
4
2
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Drain-source on-state resistance as a function
2
0
4
3
6
6
8
9
All information provided in this document is subject to legal disclaimers.
V
003aad400
003aad402
V
GS
GS
(V)
(V)
C
C
rss
iss
Rev. 02 — 2 November 2010
10
12
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S)
g
10
10
10
10
10
10
350
300
250
200
150
100
(A)
fs
I
50
D
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
min
1
PSMN1R8-30PL
40
60
typ
2
© NXP B.V. 2010. All rights reserved.
V
80
GS
003aab271
003aad401
max
I
D
(V)
(A)
100
3
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