PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R8-30PL,127
• Description: MOSFET N-CH 30V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30PL,127

• Input Capacitance (ciss) @ Vds: 10180pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5234

NXP Semiconductors
PSMN1R8-30PL
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS (th)
(V)
a
1.5
0.5
2
1
0
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
max
min
typ
60
60
120
120
All information provided in this document is subject to legal disclaimers.
003a a c982
T
T
j
j
(°C)
( ° C)
03aa27
Rev. 02 — 2 November 2010
180
180
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
8
6
4
2
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
20
V
Q
GS
GS1
(V) = 2.8
I
Q
D
PSMN1R8-30PL
GS
40
Q
GS2
Q
G(tot)
60
4.5
Q
GD
© NXP B.V. 2010. All rights reserved.
80
003aaa508
003aad395
I
D
3.5
(A)
10
3
100
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