FDPF3N50NZ

Manufacturer Part NumberFDPF3N50NZ
DescriptionMOSFET N-CH 500V 3A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET-II™
FDPF3N50NZ datasheet
 


Specifications of FDPF3N50NZ

Input Capacitance (ciss) @ Vds280pF @ 25VFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs2.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)500VCurrent - Continuous Drain (id) @ 25° C3A
Vgs(th) (max) @ Id5V @ 250µAGate Charge (qg) @ Vgs9nC @ 10V
Power - Max27WMounting TypeThrough Hole
Package / CaseTO-220-3 Full PackLead Free Status / RoHS StatusLead free / RoHS Compliant
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 1/9

Download datasheet (232Kb)Embed
Next
FDP3N50NZ / FDPF3N50NZ
N-Channel MOSFET
500V, 3A, 2.5
Features
• R
= 2.1 (Typ.)@ V
= 10V, I
DS(on)
GS
• Low Gate Charge (Typ. 6.2nC)
• Low C
(Typ. 2.5pF)
rss
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
TO-220
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
JC
R
Thermal Resistance, Case to Sink Typ.
CS
R
Thermal Resistance, Junction to Ambient
JA
©2010 Fairchild Semiconductor Corporation
FDP3N50NZ / FDPF3N50NZ Rev. A
Description
= 1.5A
These N-Channel enhancement mode power field effect transis
D
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini
mize on-state resistance, provide superior switching perfor
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
(potted)
o
T
= 25
C unless otherwise noted*
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
(Note 1)
(Note 3)
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
March 2010
UniFET-II
D
D
G
G
S
S
FDP3N50NZ
FDPF3N50NZ
500
±25
3
3*
1.8
1.8*
12
12*
(Note 2)
113
(Note 1)
3
(Note 1)
5.4
10
54
27
0.43
0.21
-55 to +150
300
FDP3N50NZ
FDPF3N50NZ
2.3
4.6
-
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF3N50NZ Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP3N50NZ / FDPF3N50NZ Rev. A Description = 1.5A These N-Channel enhancement mode power field effect transis D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini ...

  • Page 2

    ... Starting 3A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse Width  300 s, Duty cycle  2.0% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP3N50NZ / FDPF3N50NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 400 C iss = oss = rss = C gd 300 200 100 *Note 1MHz 0 0 Drain-Source Voltage [V] DS FDP3N50NZ / FDPF3N50NZ Rev. A Figure 2. Transfer Characteristics 10 1 *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 10V 20V GS o ...

  • Page 4

    ... J Figure 9. Maximum Safe Operating Area vs. Case Temperature-FDPF3N50NZ Operation in This Area is Limited by R DS(on) 0.1 *Notes: 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve- FDPF3N50NZ 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP3N50NZ / FDPF3N50NZ Rev. A (Continued) Figure 8. On-Resistance Variation 2.6 2 ...

  • Page 5

    ... FDP3N50NZ / FDPF3N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

  • Page 6

    ... FDP3N50NZ / FDPF3N50NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 7

    ... Package Dimensions FDP3N50NZ / FDPF3N50NZ Rev. A TO-220 7 www.fairchildsemi.com ...

  • Page 8

    ... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP3N50NZ / FDPF3N50NZ Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP3N50NZ / FDPF3N50NZ Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...